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Paper Abstract and Keywords
Presentation 2015-09-18 14:00
High-Sensitivity Image Sensor with Stacked Structure comprising Crystalline Selenium Photoconductor, Crystalline OS FET, and CMOS FET
Yoshiyuki Kurokawa, Takashi Nakagawa, Shuhei Maeda, Takuro Ohmaru, Takayuki Ikeda, Yasutaka Suzuki, Naoto Yamade, Hidekazu Miyairi (SEL), Shigeyuki Imura, Kenji Kikuchi, Kazunori Miyakawa, Hiroshi Ohtake, Misao Kubota (NHK), Makoto Ikeda, Shunpei Yamazaki (SEL)
Abstract (in Japanese) (See Japanese page) 
(in English) To realize a high-sensitivity CMOS image sensor using avalanche multiplication, we investigate the feasibility of a pixel structure that uses a crystalline selenium-based photoelectric conversion element and a crystalline oxide semiconductor (OS)-based FET. The OS FET is shown to have a withstand voltage of over 20 V, with which the photoelectric conversion element can cause avalanche multiplication. An amorphous selenium-based photoelectric conversion element in which holes are mainly travelling carriers and which is formed on a pixel electrode on a pseudo OS FET/CMOS FET substrate exhibits favorable photoconductivity, indicating compatibility with an OS FET/CMOS FET hybrid process. This shows the potential for realizing an OS/CMOS image sensor using avalanche multiplication in a crystalline selenium-based photoelectric conversion element.
Keyword (in Japanese) (See Japanese page) 
(in English) Crystalline oxide semiconductor / Crystalline selenium-based photoconductor film / CMOS image sensor / / / / /  
Reference Info. ITE Tech. Rep., vol. 39, no. 35, IST2015-51, pp. 33-36, Sept. 2015.
Paper # IST2015-51 
Date of Issue 2015-09-11 (IST) 
ISSN Print edition: ISSN 1342-6893  Online edition: ISSN 2424-1970

Conference Information
Committee IST  
Conference Date 2015-09-18 - 2015-09-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To IST 
Conference Code 2015-09-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High-Sensitivity Image Sensor with Stacked Structure comprising Crystalline Selenium Photoconductor, Crystalline OS FET, and CMOS FET 
Sub Title (in English)  
Keyword(1) Crystalline oxide semiconductor  
Keyword(2) Crystalline selenium-based photoconductor film  
Keyword(3) CMOS image sensor  
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1st Author's Name Yoshiyuki Kurokawa  
1st Author's Affiliation Semiconductor Energy Laboratory (SEL)
2nd Author's Name Takashi Nakagawa  
2nd Author's Affiliation Semiconductor Energy Laboratory (SEL)
3rd Author's Name Shuhei Maeda  
3rd Author's Affiliation Semiconductor Energy Laboratory (SEL)
4th Author's Name Takuro Ohmaru  
4th Author's Affiliation Semiconductor Energy Laboratory (SEL)
5th Author's Name Takayuki Ikeda  
5th Author's Affiliation Semiconductor Energy Laboratory (SEL)
6th Author's Name Yasutaka Suzuki  
6th Author's Affiliation Semiconductor Energy Laboratory (SEL)
7th Author's Name Naoto Yamade  
7th Author's Affiliation Semiconductor Energy Laboratory (SEL)
8th Author's Name Hidekazu Miyairi  
8th Author's Affiliation Semiconductor Energy Laboratory (SEL)
9th Author's Name Shigeyuki Imura  
9th Author's Affiliation NHK Science and Technology Research Laboratories (NHK)
10th Author's Name Kenji Kikuchi  
10th Author's Affiliation NHK Science and Technology Research Laboratories (NHK)
11th Author's Name Kazunori Miyakawa  
11th Author's Affiliation NHK Science and Technology Research Laboratories (NHK)
12th Author's Name Hiroshi Ohtake  
12th Author's Affiliation NHK Science and Technology Research Laboratories (NHK)
13th Author's Name Misao Kubota  
13th Author's Affiliation NHK Science and Technology Research Laboratories (NHK)
14th Author's Name Makoto Ikeda  
14th Author's Affiliation University of Tokyo (*)
15th Author's Name Shunpei Yamazaki  
15th Author's Affiliation Semiconductor Energy Laboratory (SEL)
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Speaker 12 
Date Time 2015-09-18 14:00:00 
Presentation Time 30 
Registration for IST 
Paper # ITE-IST2015-51 
Volume (vol) ITE-39 
Number (no) no.35 
Page pp.33-36 
#Pages ITE-4 
Date of Issue ITE-IST-2015-09-11 


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