ITE Technical Group Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2015-09-18 16:10
A CMOS Image Sensor with 240μV/e- Conversion Gain, 200ke- Full Well Capacity and 190-1000nm Spectral Response
Satoshi Nasuno, Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, a CMOS image sensor introducing wide spectral sensitive PD technology, small floating diffusion (FD) capacitance technology, lateral overflow integration capacitor (LOFIC) technology and buried channel technology is designed, fabricated and evaluated. A 5.6 μm pixel pitch CMOS image sensor was fabricated using a 0.18 μm 1P5M CMOS process technology. It achieved a high conversion gain (CG) of 240 μV/e-, a high full well capacity of 200 ke-, a wide spectral response for 190-1000 nm and a high robustness to deuterium lamp used as a UV light.
Keyword (in Japanese) (See Japanese page) 
(in English) Spectral response / Ultraviolet light / Conversion gain / Full well capacity / CMOS image sensor / / /  
Reference Info. ITE Tech. Rep., vol. 39, no. 35, IST2015-55, pp. 49-52, Sept. 2015.
Paper # IST2015-55 
Date of Issue 2015-09-11 (IST) 
ISSN Print edition: ISSN 1342-6893    Online edition: ISSN 2424-1970
Download PDF

Conference Information
Committee IST  
Conference Date 2015-09-18 - 2015-09-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To IST 
Conference Code 2015-09-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A CMOS Image Sensor with 240μV/e- Conversion Gain, 200ke- Full Well Capacity and 190-1000nm Spectral Response 
Sub Title (in English)  
Keyword(1) Spectral response  
Keyword(2) Ultraviolet light  
Keyword(3) Conversion gain  
Keyword(4) Full well capacity  
Keyword(5) CMOS image sensor  
1st Author's Name Satoshi Nasuno  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Shunichi Wakashima  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Fumiaki Kusuhara  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Rihito Kuroda  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Shigetoshi Sugawa  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2015-09-18 16:10:00 
Presentation Time 30 minutes 
Registration for IST 
Paper # IST2015-55 
Volume (vol) vol.39 
Number (no) no.35 
Page pp.49-52 
Date of Issue 2015-09-11 (IST) 

[Return to Top Page]

[Return to ITE Web Page]

The Institute of Image Information and Television Engineers (ITE), Japan