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Paper Abstract and Keywords
Presentation 2015-09-18 16:10
A CMOS Image Sensor with 240μV/e- Conversion Gain, 200ke- Full Well Capacity and 190-1000nm Spectral Response
Satoshi Nasuno, Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, a CMOS image sensor introducing wide spectral sensitive PD technology, small floating diffusion (FD) capacitance technology, lateral overflow integration capacitor (LOFIC) technology and buried channel technology is designed, fabricated and evaluated. A 5.6 μm pixel pitch CMOS image sensor was fabricated using a 0.18 μm 1P5M CMOS process technology. It achieved a high conversion gain (CG) of 240 μV/e-, a high full well capacity of 200 ke-, a wide spectral response for 190-1000 nm and a high robustness to deuterium lamp used as a UV light.
Keyword (in Japanese) (See Japanese page) 
(in English) Spectral response / Ultraviolet light / Conversion gain / Full well capacity / CMOS image sensor / / /  
Reference Info. ITE Tech. Rep., vol. 39, no. 35, IST2015-55, pp. 49-52, Sept. 2015.
Paper # IST2015-55 
Date of Issue 2015-09-11 (IST) 
ISSN Print edition: ISSN 1342-6893  Online edition: ISSN 2424-1970

Conference Information
Committee IST  
Conference Date 2015-09-18 - 2015-09-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To IST 
Conference Code 2015-09-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A CMOS Image Sensor with 240μV/e- Conversion Gain, 200ke- Full Well Capacity and 190-1000nm Spectral Response 
Sub Title (in English)  
Keyword(1) Spectral response  
Keyword(2) Ultraviolet light  
Keyword(3) Conversion gain  
Keyword(4) Full well capacity  
Keyword(5) CMOS image sensor  
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1st Author's Name Satoshi Nasuno  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Shunichi Wakashima  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Fumiaki Kusuhara  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Rihito Kuroda  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Shigetoshi Sugawa  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker
Date Time 2015-09-18 16:10:00 
Presentation Time 30 
Registration for IST 
Paper # ITE-IST2015-55 
Volume (vol) ITE-39 
Number (no) no.35 
Page pp.49-52 
#Pages ITE-4 
Date of Issue ITE-IST-2015-09-11 


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