Paper Abstract and Keywords |
Presentation |
2015-09-18 10:15
A 3D stacked CMOS image sensor with 16Mpixel global-shutter mode using 4 million interconnections Toru Kondo, Yoshiaki Takemoto, Kenji Kobayashi, Mitsuhiro Tsukimura, Naohiro Takazawa, Hideki Kato, Shunsuke Suzuki, Jun Aoki, Haruhisa Saito, Yuichi Gomi, Seisuke Matsuda, Yoshitaka Tadaki (Olympus) |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have developed a 16Mpixel 3D stacked global-shutter CMOS image sensor with pixel level interconnections using 4 million micro bumps. The four photodiodes in the unit pixel circuit on the top substrate share one micro-bump interconnection in 7.6µm pitch. Each signal of the photodiodes is transferred to the corresponding storage node on the bottom substrate via the interconnection to achieve a global shutter function. The ratio of the parasitic light sensitivity of an in-pixel storage node and the light sensitivity of a photodiode is -180dB with 3.8µm pixel size. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
CMOS Image Sensor / 3D stacked structure / Global shutter / In-Pixel Storage Node / / / / |
Reference Info. |
ITE Tech. Rep., vol. 39, no. 35, IST2015-45, pp. 9-12, Sept. 2015. |
Paper # |
IST2015-45 |
Date of Issue |
2015-09-11 (IST) |
ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
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