Paper Abstract and Keywords |
Presentation |
2016-05-06 13:05
[Poster Presentation]
A Lateral Electric Field Charge Modulator without Negative Gate Bias Yuki Morikawa, Keita Yasutomi, Shoma Imanishi, Taishi Takasawa, Keiichiro Kagawa, Nobukazu Teranishi, Shoji Kawahito (Shizuoka Univ.) |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
This paper presents a new pixel structure for a lateral electric field charge modulator without negative gate bias. The proposed pixel structure employs p-type gates as well as n-type gates unlike the conventional structure in which the only n-type gates is used. Since the bipolar-gates structure helps to attract holes at zero bias by work function difference between the p-type gate and p-substrate. The negative gate bias is not required in the modulation pulses. It makes easy to introduce an in-pixel buffer, which plays an important role for high-speed charge modulation. The test chip fabricated in 0.11 um CIS technology demonstrates the hole attraction effect, and the modulation contrast is measured to be 97%. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
CMOS image sensor / Time-resolved image sensor / Lateral-Electric-Field charge Modulator / negative gate biasless / / / / |
Reference Info. |
ITE Tech. Rep., vol. 40, no. 15, IST2016-23, pp. 9-12, May 2016. |
Paper # |
IST2016-23 |
Date of Issue |
2016-04-29 (IST) |
ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
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