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Paper Abstract and Keywords
Presentation 2016-08-03 14:40
PN-Body Tied Super Steep SS FET with Body Bias below 1V and Drain Bias 0.1V
Takahiro Yoshida, Jiro Ida, Takashi Horii (KIT), Masao Okihara (Lapis), Yasuo Arai (KEK)
Abstract (in Japanese) (See Japanese page) 
(in English) We have found out that the super steep Subthreshold Slope (SS) of the PN-body tied SOI FET appeared with the body voltage of below 1V. and the drain voltage of 0.1V when the N layer of the body tied region changes from the N+ to the N- . Device simulations reproduced the difference of the necessity body voltage on appearance of the super steep SS between the N+ and the N-. In addition, results of simulation show the optimized width of N layer with both the N+ and the N-.
Keyword (in Japanese) (See Japanese page) 
(in English) SS / SOI MOSFET / BIP / / / / /  
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Conference Information
Conference Date 2016-08-01 - 2016-08-03 
Place (in Japanese) (See Japanese page) 
Place (in English) Central Electric Club 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications 
Paper Information
Registration To IEICE-SDM 
Conference Code 2016-08-ICD-SDM-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) PN-Body Tied Super Steep SS FET with Body Bias below 1V and Drain Bias 0.1V 
Sub Title (in English)  
Keyword(1) SS  
Keyword(2) SOI MOSFET  
Keyword(3) BIP  
1st Author's Name Takahiro Yoshida  
1st Author's Affiliation Kanazawa Institute of Technology (KIT)
2nd Author's Name Jiro Ida  
2nd Author's Affiliation Kanazawa Institute of Technology (KIT)
3rd Author's Name Takashi Horii  
3rd Author's Affiliation Kanazawa Institute of Technology (KIT)
4th Author's Name Masao Okihara  
4th Author's Affiliation LAPIS Semiconductor (Lapis)
5th Author's Name Yasuo Arai  
5th Author's Affiliation High Energy Accelerator Research Organization (KEK)
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Speaker Author-1 
Date Time 2016-08-03 14:40:00 
Presentation Time 25 minutes 
Registration for IEICE-SDM 
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Volume (vol) vol.40 
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Date of Issue  

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