ITE Technical Group Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2016-08-03 15:05
Increased Drain-Induced Variability and Within-Device Variability in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm
Tomoko Mizutani, Kiyoshi Takeuchi, Ryota Suzuki, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo)
Abstract (in Japanese) (See Japanese page) 
(in English) The effects of drain voltage in threshold voltage variability in extremely narrow silicon nanowire (NW) channel FETs are measured and statistically analyzed. It was found that the drain-induced variability and “within-device” variability increase as the NW width decreases to 2nm. The origin of the increased variability is ascribed to quantum confinement due to NW width asymmetry at the source and drain.
Keyword (in Japanese) (See Japanese page) 
(in English) Nanowire MOSFET / Variability / DIBL / / / / /  
Reference Info. ITE Tech. Rep.
Paper #  
Date of Issue  
ISSN Print edition: ISSN 1342-6893  Online edition: ISSN 2424-1970
Download PDF

Conference Information
Committee IEICE-ICD IEICE-SDM IST  
Conference Date 2016-08-01 - 2016-08-03 
Place (in Japanese) (See Japanese page) 
Place (in English) Central Electric Club 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications 
Paper Information
Registration To IEICE-SDM 
Conference Code 2016-08-ICD-SDM-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Increased Drain-Induced Variability and Within-Device Variability in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm 
Sub Title (in English)  
Keyword(1) Nanowire MOSFET  
Keyword(2) Variability  
Keyword(3) DIBL  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Tomoko Mizutani  
1st Author's Affiliation The University of Tokyo (Univ. of Tokyo)
2nd Author's Name Kiyoshi Takeuchi  
2nd Author's Affiliation The University of Tokyo (Univ. of Tokyo)
3rd Author's Name Ryota Suzuki  
3rd Author's Affiliation The University of Tokyo (Univ. of Tokyo)
4th Author's Name Takuya Saraya  
4th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
5th Author's Name Masaharu Kobayashi  
5th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
6th Author's Name Toshiro Hiramoto  
6th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker
Date Time 2016-08-03 15:05:00 
Presentation Time 25 
Registration for IEICE-SDM 
Paper #  
Volume (vol) ITE-40 
Number (no)  
Page  
#Pages ITE- 
Date of Issue  


[Return to Top Page]

[Return to ITE Web Page]


The Institute of Image Information and Television Engineers (ITE), Japan