Integrated circuits with non-volatile spintronics memory devices open up new pathways toward ultralow-power and high-performance computing systems. Three-terminal spintronics devices allow high-speed operation and relaxed design constraints compared with the two-terminal counterpart. We here review our recent studies on three-terminal devices with spin-orbit torque induced switching, which can be reliably operated with sub-ns current pulses. Advanced structures and material engineering to further improve the device properties are also discussed.