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Paper Abstract and Keywords
Presentation 2018-03-08 15:50
[Invited Lecture] Self-Aligned Source/Drain Formation Technology by AlO Sputtering Realizing Highly Reliable Oxide TFT Backplane
Hiroshi Hayashi, Atsuhito Murai, Masanori Miura, Yasuhiro Terai, Yoshihiro Oshima, Tohru Saitoh, Yasunobu Hiromasu, Toshiaki Arai (JOLED)
Abstract (in Japanese) (See Japanese page) 
(in English) We have developed a novel fabrication process of self-aligned top-gate oxide TFT suitable for high resolution and high speed driving. In the process, AlO layer is sputtered with respect to the low-resistance oxide semiconductor film using top-gate electrode as mask, so that the low resistance oxide semiconductor region is selectively maintained to be a source/drain region. The AlO layer formed by sputtering method has a high barrier performance against impurity diffusion which deteriorates the uniformity and reliability of the oxide TFT. In addition, it can be easily expanded to a large substrate fabrication with high productivity. The developed technology is useful for manufacturing an oxide TFT backplane for OLED display which is required to have high uniformity and high reliability.
Keyword (in Japanese) (See Japanese page) 
(in English) oxide TFT / self-aligned structure / top-gate / AlO barrier layer / OLED display / / /  
Reference Info. ITE Tech. Rep., vol. 42, no. 8, IDY2018-21, pp. 31-35, March 2018.
Paper # IDY2018-21 
Date of Issue 2018-03-01 (IDY) 
ISSN Print edition: ISSN 1342-6893    Online edition: ISSN 2424-1970
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Conference Information
Committee IDY  
Conference Date 2018-03-08 - 2018-03-08 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To IDY 
Conference Code 2018-03-IDY 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Self-Aligned Source/Drain Formation Technology by AlO Sputtering Realizing Highly Reliable Oxide TFT Backplane 
Sub Title (in English)  
Keyword(1) oxide TFT  
Keyword(2) self-aligned structure  
Keyword(3) top-gate  
Keyword(4) AlO barrier layer  
Keyword(5) OLED display  
1st Author's Name Hiroshi Hayashi  
1st Author's Affiliation JOLED Inc. (JOLED)
2nd Author's Name Atsuhito Murai  
2nd Author's Affiliation JOLED Inc. (JOLED)
3rd Author's Name Masanori Miura  
3rd Author's Affiliation JOLED Inc. (JOLED)
4th Author's Name Yasuhiro Terai  
4th Author's Affiliation JOLED Inc. (JOLED)
5th Author's Name Yoshihiro Oshima  
5th Author's Affiliation JOLED Inc. (JOLED)
6th Author's Name Tohru Saitoh  
6th Author's Affiliation JOLED Inc. (JOLED)
7th Author's Name Yasunobu Hiromasu  
7th Author's Affiliation JOLED Inc. (JOLED)
8th Author's Name Toshiaki Arai  
8th Author's Affiliation JOLED Inc. (JOLED)
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Speaker Author-1 
Date Time 2018-03-08 15:50:00 
Presentation Time 25 minutes 
Registration for IDY 
Paper # IDY2018-21 
Volume (vol) vol.42 
Number (no) no.8 
Page pp.31-35 
Date of Issue 2018-03-01 (IDY) 

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