| Paper Abstract and Keywords |
| Presentation |
2018-03-08 15:50
[Invited Lecture]
Self-Aligned Source/Drain Formation Technology by AlO Sputtering Realizing Highly Reliable Oxide TFT Backplane
Hiroshi Hayashi, Atsuhito Murai, Masanori Miura, Yasuhiro Terai, Yoshihiro Oshima, Tohru Saitoh, Yasunobu Hiromasu, Toshiaki Arai (JOLED) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
We have developed a novel fabrication process of self-aligned top-gate oxide TFT suitable for high resolution and high speed driving. In the process, AlO layer is sputtered with respect to the low-resistance oxide semiconductor film using top-gate electrode as mask, so that the low resistance oxide semiconductor region is selectively maintained to be a source/drain region. The AlO layer formed by sputtering method has a high barrier performance against impurity diffusion which deteriorates the uniformity and reliability of the oxide TFT. In addition, it can be easily expanded to a large substrate fabrication with high productivity. The developed technology is useful for manufacturing an oxide TFT backplane for OLED display which is required to have high uniformity and high reliability. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
oxide TFT / self-aligned structure / top-gate / AlO barrier layer / OLED display / / / |
| Reference Info. |
ITE Tech. Rep., vol. 42, no. 8, IDY2018-21, pp. 31-35, March 2018. |
| Paper # |
IDY2018-21 |
| Date of Issue |
2018-03-01 (IDY) |
| ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
| Download PDF |
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| Conference Information |
| Committee |
IDY |
| Conference Date |
2018-03-08 - 2018-03-08 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
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| Paper Information |
| Registration To |
IDY |
| Conference Code |
2018-03-IDY |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Self-Aligned Source/Drain Formation Technology by AlO Sputtering Realizing Highly Reliable Oxide TFT Backplane |
| Sub Title (in English) |
|
| Keyword(1) |
oxide TFT |
| Keyword(2) |
self-aligned structure |
| Keyword(3) |
top-gate |
| Keyword(4) |
AlO barrier layer |
| Keyword(5) |
OLED display |
| Keyword(6) |
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| Keyword(7) |
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| Keyword(8) |
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| 1st Author's Name |
Hiroshi Hayashi |
| 1st Author's Affiliation |
JOLED Inc. (JOLED) |
| 2nd Author's Name |
Atsuhito Murai |
| 2nd Author's Affiliation |
JOLED Inc. (JOLED) |
| 3rd Author's Name |
Masanori Miura |
| 3rd Author's Affiliation |
JOLED Inc. (JOLED) |
| 4th Author's Name |
Yasuhiro Terai |
| 4th Author's Affiliation |
JOLED Inc. (JOLED) |
| 5th Author's Name |
Yoshihiro Oshima |
| 5th Author's Affiliation |
JOLED Inc. (JOLED) |
| 6th Author's Name |
Tohru Saitoh |
| 6th Author's Affiliation |
JOLED Inc. (JOLED) |
| 7th Author's Name |
Yasunobu Hiromasu |
| 7th Author's Affiliation |
JOLED Inc. (JOLED) |
| 8th Author's Name |
Toshiaki Arai |
| 8th Author's Affiliation |
JOLED Inc. (JOLED) |
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| Speaker |
Author-1 |
| Date Time |
2018-03-08 15:50:00 |
| Presentation Time |
25 minutes |
| Registration for |
IDY |
| Paper # |
IDY2018-21 |
| Volume (vol) |
vol.42 |
| Number (no) |
no.8 |
| Page |
pp.31-35 |
| #Pages |
5 |
| Date of Issue |
2018-03-01 (IDY) |
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