| Paper Abstract and Keywords |
| Presentation |
2018-03-09 15:10
Single-crystalline GeSn Photodiode Array on Quartz Substrate for Back-side Illuminated Near-infrared Image Sensor
Hiroshi Oka, Keitaro Inoue (Osaka Univ.), Thi Thuy Nguyen, Shin-Ichiro Kuroki (Hiroshima Univ.), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Imaging and sensing using near-infrared (NIR) light with a wavelength of 2-5 um have attracted a great interest due to its various applications including night vision, environmental monitoring, and biochemical sensing. GeSn alloy is a promising group-IV mixed crystal for NIR photodetection due to its tunable bandgap and extended cut-off wavelength (>1.55 um) depending on Sn content. In this work, we have fabricated single-crystalline GeSn photodiode array on a quartz substrate by novel laser-induced liquid-phase crystallization technique. Thanks to high transparency of quartz to the NIR light, a quantum yield of 100% at a wavelength of 1.55 um was obtained by back-side illumination. The present technology enables monolithically integrated group-IV-based back-side illuminated NIR image sensor. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
GeSn / Sensor array / Quartz substrate / Near-infrared photodetection / Back-side illumination / / / |
| Reference Info. |
ITE Tech. Rep., vol. 42, no. 10, IST2018-22, pp. 47-50, March 2018. |
| Paper # |
IST2018-22 |
| Date of Issue |
2018-03-02 (IST) |
| ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
| Download PDF |
|
| Conference Information |
| Committee |
IST |
| Conference Date |
2018-03-09 - 2018-03-09 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
NHK Housou-Gijyutu Lab. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Image Sensors, etc. |
| Paper Information |
| Registration To |
IST |
| Conference Code |
2018-03-IST |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Single-crystalline GeSn Photodiode Array on Quartz Substrate for Back-side Illuminated Near-infrared Image Sensor |
| Sub Title (in English) |
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| Keyword(1) |
GeSn |
| Keyword(2) |
Sensor array |
| Keyword(3) |
Quartz substrate |
| Keyword(4) |
Near-infrared photodetection |
| Keyword(5) |
Back-side illumination |
| Keyword(6) |
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| Keyword(7) |
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| 1st Author's Name |
Hiroshi Oka |
| 1st Author's Affiliation |
Osaka University (Osaka Univ.) |
| 2nd Author's Name |
Keitaro Inoue |
| 2nd Author's Affiliation |
Osaka University (Osaka Univ.) |
| 3rd Author's Name |
Thi Thuy Nguyen |
| 3rd Author's Affiliation |
Hiroshima University (Hiroshima Univ.) |
| 4th Author's Name |
Shin-Ichiro Kuroki |
| 4th Author's Affiliation |
Hiroshima University (Hiroshima Univ.) |
| 5th Author's Name |
Takuji Hosoi |
| 5th Author's Affiliation |
Osaka University (Osaka Univ.) |
| 6th Author's Name |
Takayoshi Shimura |
| 6th Author's Affiliation |
Osaka University (Osaka Univ.) |
| 7th Author's Name |
Heiji Watanabe |
| 7th Author's Affiliation |
Osaka University (Osaka Univ.) |
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| Speaker |
Author-1 |
| Date Time |
2018-03-09 15:10:00 |
| Presentation Time |
20 minutes |
| Registration for |
IST |
| Paper # |
IST2018-22 |
| Volume (vol) |
vol.42 |
| Number (no) |
no.10 |
| Page |
pp.47-50 |
| #Pages |
4 |
| Date of Issue |
2018-03-02 (IST) |