講演抄録/キーワード |
講演名 |
2018-06-27 14:10
[ポスター講演][Poster Presentation] A backside illumination fully depleted SOI pixel detector for time-of-flight range imaging ○Ho Hai Nam・Keita Yasutomi・Sanggwon Lee・Shoji Kawahito(Shizuoka Univ.) |
抄録 |
(和) |
A back-illuminated fully-depleted silicon-on-insulator (SOI) time-of-flight (TOF) image sensor have been realized using 0.2 m SOI pixel technology. A 150 m thick bulk substrate is used to get higher quantum efficiency (QE) at near-infrared (NIR) region. The SOI pixel with 4-tapped charge modulator and drain function had been employed with prototype line scanned image array of 1x120. The distance is measured at 6 m with line scanned laser. Measured Quantum efficiency of 95% at 900nm had been reported |
(英) |
A back-illuminated fully-depleted silicon-on-insulator (SOI) time-of-flight (TOF) image sensor have been realized using 0.2 m SOI pixel technology. A 150 m thick bulk substrate is used to get higher quantum efficiency (QE) at near-infrared (NIR) region. The SOI pixel with 4-tapped charge modulator and drain function had been employed with prototype line scanned image array of 1x120. The distance is measured at 6 m with line scanned laser. Measured Quantum efficiency of 95% at 900nm had been reported |
キーワード |
(和) |
CMOS image sensor / SOI devices / TOF camera / / / / / |
(英) |
CMOS image sensor / SOI devices / TOF camera / / / / / |
文献情報 |
映情学技報, vol. 42, no. 19, IST2018-38, pp. 29-32, 2018年6月. |
資料番号 |
IST2018-38 |
発行日 |
2018-06-20 (IST) |
ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
PDFダウンロード |
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