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Paper Abstract and Keywords
Presentation 2018-12-25 11:45
Device Using Thin Film of GTO by MistCVD Method
Yuta Takishita, Sumio Sugisaki (Ryukoku Univ.), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) We made devices using Ga-Sn-O(GTO) thin films deposited by mist CVD method. A thin film transistor incorporating GTO prepared by the mist CVD method as a channel layer was fabricated with the AlOx dielectric onto Si substrate. The device was evaluated and confirmed that it was success driven. In addition, switching resistance memory using a GTO thin film prepared by the mist CVD method was created and evaluated.
Keyword (in Japanese) (See Japanese page) 
(in English) Oxide semiconductor / GaSnO / thin film transistor / mistCVD / / / /  
Reference Info. ITE Tech. Rep., vol. 42, no. 45, IDY2018-57, pp. 13-16, Dec. 2018.
Paper # IDY2018-57 
Date of Issue 2018-12-18 (IDY) 
ISSN Print edition: ISSN 1342-6893  Online edition: ISSN 2424-1970

Conference Information
Committee IEICE-EID IEICE-SDM IDY  
Conference Date 2018-12-25 - 2018-12-25 
Place (in Japanese) (See Japanese page) 
Place (in English)  
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Topics (in English)  
Paper Information
Registration To IDY 
Conference Code 2018-12-EID-SDM-IDY 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Device Using Thin Film of GTO by MistCVD Method 
Sub Title (in English)  
Keyword(1) Oxide semiconductor  
Keyword(2) GaSnO  
Keyword(3) thin film transistor  
Keyword(4) mistCVD  
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1st Author's Name Yuta Takishita  
1st Author's Affiliation Ryukoku University (Ryukoku Univ.)
2nd Author's Name Sumio Sugisaki  
2nd Author's Affiliation Ryukoku University (Ryukoku Univ.)
3rd Author's Name Daichi Koretomo  
3rd Author's Affiliation Kochi University of Technology (KUT)
4th Author's Name Yusaku Magari  
4th Author's Affiliation Kochi University of Technology (KUT)
5th Author's Name Mamoru Furuta  
5th Author's Affiliation Kochi University of Technology (KUT)
6th Author's Name Tokiyoshi Matsuda  
6th Author's Affiliation Ryukoku University (Ryukoku Univ.)
7th Author's Name Mutsumi Kimura  
7th Author's Affiliation Ryukoku University (Ryukoku Univ.)
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Speaker
Date Time 2018-12-25 11:45:00 
Presentation Time 15 
Registration for IDY 
Paper # ITE-IDY2018-57 
Volume (vol) ITE-42 
Number (no) no.45 
Page pp.13-16 
#Pages ITE-4 
Date of Issue ITE-IDY-2018-12-18 


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