| Paper Abstract and Keywords |
| Presentation |
2019-03-22 13:00
A 24.3Me- Full Well Capacity and High Near Infrared Sensitivity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor
Maasa Murata, Rihito Kuroda, Yasuyuki Fujihara, Yusuke Otsuka (Tohoku Univ.), Hiroshi Shibata, Taku Shibaguchi, Yutaka Kamata, Noriyuki Miura, Naoya Kuriyama (LAPIS), Shigetoshi Sugawa (Tohoku Univ.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
This paper presents a 16$mu$m pixel pitch CMOS image sensor exhibiting 24.3Me- full well capacity and high near infrared sensitivity by the introduction of lateral overflow integration trench capacitor on a low impurity concentration p-type Si substrate. The CIS achieved 71.3dB SNR with linear response and 200-1100nm wide spectral response with high quantum efficiency. As one of applications using the CIS, a near infrared absorption imaging for non-invasive blood glucose measurement was experimented and a diffusion of 5mg/dl concentration glucose was clearly visualized at 1050nm. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
CIS / Lateral Overflow Integration Trench Capacitor / Absorption Imaging / Near Infrared Light / High Saturation / / / |
| Reference Info. |
ITE Tech. Rep., vol. 43, no. 11, IST2019-17, pp. 27-32, March 2019. |
| Paper # |
IST2019-17 |
| Date of Issue |
2019-03-15 (IST) |
| ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
| Download PDF |
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