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Paper Abstract and Keywords
Presentation 2019-03-22 13:00
A 24.3Me- Full Well Capacity and High Near Infrared Sensitivity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor
Maasa Murata, Rihito Kuroda, Yasuyuki Fujihara, Yusuke Otsuka (Tohoku Univ.), Hiroshi Shibata, Taku Shibaguchi, Yutaka Kamata, Noriyuki Miura, Naoya Kuriyama (LAPIS), Shigetoshi Sugawa (Tohoku Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) This paper presents a 16$mu$m pixel pitch CMOS image sensor exhibiting 24.3Me- full well capacity and high near infrared sensitivity by the introduction of lateral overflow integration trench capacitor on a low impurity concentration p-type Si substrate. The CIS achieved 71.3dB SNR with linear response and 200-1100nm wide spectral response with high quantum efficiency. As one of applications using the CIS, a near infrared absorption imaging for non-invasive blood glucose measurement was experimented and a diffusion of 5mg/dl concentration glucose was clearly visualized at 1050nm.
Keyword (in Japanese) (See Japanese page) 
(in English) CIS / Lateral Overflow Integration Trench Capacitor / Absorption Imaging / Near Infrared Light / High Saturation / / /  
Reference Info. ITE Tech. Rep., vol. 43, no. 11, IST2019-17, pp. 27-32, March 2019.
Paper # IST2019-17 
Date of Issue 2019-03-15 (IST) 
ISSN Print edition: ISSN 1342-6893  Online edition: ISSN 2424-1970
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Conference Information
Committee IST  
Conference Date 2019-03-22 - 2019-03-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Image Sensors, etc. 
Paper Information
Registration To IST 
Conference Code 2019-03-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 24.3Me- Full Well Capacity and High Near Infrared Sensitivity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor 
Sub Title (in English)  
Keyword(1) CIS  
Keyword(2) Lateral Overflow Integration Trench Capacitor  
Keyword(3) Absorption Imaging  
Keyword(4) Near Infrared Light  
Keyword(5) High Saturation  
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Keyword(7)  
Keyword(8)  
1st Author's Name Maasa Murata  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Rihito Kuroda  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Yasuyuki Fujihara  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Yusuke Otsuka  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Hiroshi Shibata  
5th Author's Affiliation LAPIS Semiconductor Miyagi Co., Ltd. (LAPIS)
6th Author's Name Taku Shibaguchi  
6th Author's Affiliation LAPIS Semiconductor Miyagi Co., Ltd. (LAPIS)
7th Author's Name Yutaka Kamata  
7th Author's Affiliation LAPIS Semiconductor Miyagi Co., Ltd. (LAPIS)
8th Author's Name Noriyuki Miura  
8th Author's Affiliation LAPIS Semiconductor Miyagi Co., Ltd. (LAPIS)
9th Author's Name Naoya Kuriyama  
9th Author's Affiliation LAPIS Semiconductor Miyagi Co., Ltd. (LAPIS)
10th Author's Name Shigetoshi Sugawa  
10th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker
Date Time 2019-03-22 13:00:00 
Presentation Time 30 
Registration for IST 
Paper # ITE-IST2019-17 
Volume (vol) ITE-43 
Number (no) no.11 
Page pp.27-32 
#Pages ITE-6 
Date of Issue ITE-IST-2019-03-15 


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