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Paper Abstract and Keywords
Presentation 2019-12-24 13:45
Development of memristor using Ga-Sn-O thin film by mist CVD method
Masaki Kobayashi, Sumio Sugisaki, Mutsumi Kimura (Ryukoku Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) We are conducting research on Resistive Random Access Memory (ReRAM) using Ga-Sn-O(GTO) thin films. In this study, we fabricated and evaluated an oxide layer ReRAM using the low-cost mist CVD method. The experiment of the I-V characteristics was repeated 150 times, and the characteristics as a memory were confirmed.
Keyword (in Japanese) (See Japanese page) 
(in English) ReRAM / Ga-Sn-O / Mist CVD method / / / / /  
Reference Info. ITE Tech. Rep., vol. 43, no. 44, IDY2019-69, pp. 5-8, Dec. 2019.
Paper # IDY2019-69 
Date of Issue 2019-12-17 (IDY) 
ISSN Print edition: ISSN 1342-6893  Online edition: ISSN 2424-1970
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Conference Information
Conference Date 2019-12-24 - 2019-12-24 
Place (in Japanese) (See Japanese page) 
Place (in English) NAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor Material Process and Device Meeting 
Paper Information
Registration To IDY 
Conference Code 2019-12-SDM-EID-IDY 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Development of memristor using Ga-Sn-O thin film by mist CVD method 
Sub Title (in English)  
Keyword(1) ReRAM  
Keyword(2) Ga-Sn-O  
Keyword(3) Mist CVD method  
1st Author's Name Masaki Kobayashi  
1st Author's Affiliation Ryukoku University (Ryukoku Univ.)
2nd Author's Name Sumio Sugisaki  
2nd Author's Affiliation Ryukoku University (Ryukoku Univ.)
3rd Author's Name Mutsumi Kimura  
3rd Author's Affiliation Ryukoku University (Ryukoku Univ.)
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Date Time 2019-12-24 13:45:00 
Presentation Time 20 
Registration for IDY 
Paper # ITE-IDY2019-69 
Volume (vol) ITE-43 
Number (no) no.44 
Page pp.5-8 
#Pages ITE-4 
Date of Issue ITE-IDY-2019-12-17 

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