| Conference Information |
| Committee |
IDY IEICE-EID IEIJ-SSL SID-JC IEE-EDD |
| Conference Date |
2020-01-23 - 2020-01-24 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Tottori Univ |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
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| Paper Information |
| Registration To |
IEICE-EID |
| Conference Code |
2020-01-EID-IDY-SSL-JC-EDD |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Physical properties of anodized aluminum oxide for low temperature processed IGZO thin-film transistors. |
| Sub Title (in English) |
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| Keyword(1) |
InGaZnO(IGZO) |
| Keyword(2) |
Aluminum oxide |
| Keyword(3) |
anodization |
| Keyword(4) |
Thin Film Transistor (TFT) |
| Keyword(5) |
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| Keyword(6) |
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| Keyword(7) |
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| Keyword(8) |
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| 1st Author's Name |
Kono Shuya |
| 1st Author's Affiliation |
Kochi University Of Technology (KUT) |
| 2nd Author's Name |
Mori Marin |
| 2nd Author's Affiliation |
Kochi University Of Technology (KUT) |
| 3rd Author's Name |
Koretomo Daichi |
| 3rd Author's Affiliation |
Kochi University Of Technology (KUT) |
| 4th Author's Name |
Furuta Mamoru |
| 4th Author's Affiliation |
Kochi University Of Technology (KUT) |
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| Speaker |
Author-1 |
| Date Time |
2020-01-24 11:10:00 |
| Presentation Time |
5 minutes |
| Registration for |
IEICE-EID |
| Paper # |
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| Volume (vol) |
vol.44 |
| Number (no) |
no.1 |
| Page |
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| #Pages |
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| Date of Issue |
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