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Paper Abstract and Keywords
Presentation 2020-01-24 11:10
[Poster Presentation] Physical properties of anodized aluminum oxide for low temperature processed IGZO thin-film transistors.
Kono Shuya, Mori Marin, Koretomo Daichi, Furuta Mamoru (KUT)
Abstract (in Japanese) (See Japanese page) 
(in English) (Available after conference date)
Keyword (in Japanese) (See Japanese page) 
(in English) InGaZnO(IGZO) / Aluminum oxide / anodization / Thin Film Transistor (TFT) / / / /  
Reference Info. ITE Tech. Rep.
Paper #  
Date of Issue  
ISSN Print edition: ISSN 1342-6893  Online edition: ISSN 2424-1970
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Conference Information
Committee IDY IEICE-EID IEIJ-SSL SID-JC IEE-EDD  
Conference Date 2020-01-23 - 2020-01-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Tottori Univ 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To IEICE-EID 
Conference Code 2020-01-EID-IDY-SSL-JC-EDD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Physical properties of anodized aluminum oxide for low temperature processed IGZO thin-film transistors. 
Sub Title (in English)  
Keyword(1) InGaZnO(IGZO)  
Keyword(2) Aluminum oxide  
Keyword(3) anodization  
Keyword(4) Thin Film Transistor (TFT)  
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1st Author's Name Kono Shuya  
1st Author's Affiliation Kochi University Of Technology (KUT)
2nd Author's Name Mori Marin  
2nd Author's Affiliation Kochi University Of Technology (KUT)
3rd Author's Name Koretomo Daichi  
3rd Author's Affiliation Kochi University Of Technology (KUT)
4th Author's Name Furuta Mamoru  
4th Author's Affiliation Kochi University Of Technology (KUT)
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Speaker
Date Time 2020-01-24 11:10:00 
Presentation Time
Registration for IEICE-EID 
Paper #  
Volume (vol) ITE-44 
Number (no) no.1 
Page  
#Pages ITE- 
Date of Issue  


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