| Paper Abstract and Keywords |
| Presentation |
2020-03-27 13:30
High-definition Visible-SWIR InGaAs Image Sensor using Cu-Cu Bonding of III-V to Silicon Wafer
Shunsuke Maruyama, Shuji Manda, Ryosuke Matsumoto, Suguru Saito, Hideki Minari, Takaaki Hirano, Taizo Takachi, Nobutoshi Fujii, Yuichi Yamamoto, Yoshifumi Zaizen, Tomoyuki Hirano, Hayato Iwamoto (SSS) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
We developed a back-illuminated InGaAs image sensor with 1280x1024 pixels at 5-um pitch by using Cu-Cu hybridization connecting different materials, a III-V InGaAs/InP of photodiode array (PDA), and a silicon readout integrated circuit (ROIC). A new process architecture using an InGaAs/InP dies-to-silicon wafer and Cu-Cu bonding was established for high productivity and pixel-pitch scaling. We achieved low dark current and high sensitivity for wavelengths ranging from visible to short-wavelength infrared (SWIR). |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
SWIR Image Sensor / InGaAs / Cu-Cu Bonding / / / / / |
| Reference Info. |
ITE Tech. Rep., vol. 44, no. 11, IST2020-16, pp. 35-39, March 2020. |
| Paper # |
IST2020-16 |
| Date of Issue |
2020-03-20 (IST) |
| ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
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