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Paper Abstract and Keywords
Presentation 2020-08-06 10:15
[Invited Talk] Polarization/charge coupling in Si ferroelectric FET and its impact on memory characteristics
Kasidit Toprasertpong, Zaoyang Lin, Tsung-En Lee, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo)
Abstract (in Japanese) (See Japanese page) 
(in English) Ferroelectric FETs, where the ferroelectric material is employed as the MOSFET gate insulator, are different from conventional MOSFETs that the device operation is determined by the complicated interaction between ferroelectric polarization/inversion charges/trapped charges at the ferroelectric/semiconductor interface. In this report, we summarize our finding on the interaction between polarization and charges extracted from P-V and quasi-static split C-V measurements, proposed by our group, together with Hall measurements, and discuss the origin of complicated device operation and asymmetric memory characteristics of ferroelectric FETs.
Keyword (in Japanese) (See Japanese page) 
(in English) Ferroelectric FET / Device operation mechanism / Inversion charge / Quasi-static split C-V / Polarization-voltage characteristics / / /  
Reference Info. ITE Tech. Rep.
Paper #  
Date of Issue  
ISSN Print edition: ISSN 1342-6893  Online edition: ISSN 2424-1970
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Conference Information
Committee IEICE-ICD IEICE-SDM IST  
Conference Date 2020-08-06 - 2020-08-07 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications 
Paper Information
Registration To IEICE-SDM 
Conference Code 2020-08-ICD-SDM-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Polarization/charge coupling in Si ferroelectric FET and its impact on memory characteristics 
Sub Title (in English)  
Keyword(1) Ferroelectric FET  
Keyword(2) Device operation mechanism  
Keyword(3) Inversion charge  
Keyword(4) Quasi-static split C-V  
Keyword(5) Polarization-voltage characteristics  
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1st Author's Name Kasidit Toprasertpong  
1st Author's Affiliation The University of Tokyo (Univ. Tokyo)
2nd Author's Name Zaoyang Lin  
2nd Author's Affiliation The University of Tokyo (Univ. Tokyo)
3rd Author's Name Tsung-En Lee  
3rd Author's Affiliation The University of Tokyo (Univ. Tokyo)
4th Author's Name Mitsuru Takenaka  
4th Author's Affiliation The University of Tokyo (Univ. Tokyo)
5th Author's Name Shinichi Takagi  
5th Author's Affiliation The University of Tokyo (Univ. Tokyo)
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Speaker
Date Time 2020-08-06 10:15:00 
Presentation Time 45 
Registration for IEICE-SDM 
Paper #  
Volume (vol) ITE-44 
Number (no)  
Page  
#Pages ITE- 
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