| Paper Abstract and Keywords |
| Presentation |
2020-08-06 10:15
[Invited Talk]
Polarization/charge coupling in Si ferroelectric FET and its impact on memory characteristics
Kasidit Toprasertpong, Zaoyang Lin, Tsung-En Lee, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Ferroelectric FETs, where the ferroelectric material is employed as the MOSFET gate insulator, are different from conventional MOSFETs that the device operation is determined by the complicated interaction between ferroelectric polarization/inversion charges/trapped charges at the ferroelectric/semiconductor interface. In this report, we summarize our finding on the interaction between polarization and charges extracted from P-V and quasi-static split C-V measurements, proposed by our group, together with Hall measurements, and discuss the origin of complicated device operation and asymmetric memory characteristics of ferroelectric FETs. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
Ferroelectric FET / Device operation mechanism / Inversion charge / Quasi-static split C-V / Polarization-voltage characteristics / / / |
| Reference Info. |
ITE Tech. Rep. |
| Paper # |
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| Download PDF |
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| Conference Information |
| Committee |
IEICE-ICD IEICE-SDM IST |
| Conference Date |
2020-08-06 - 2020-08-07 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Online |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
| Paper Information |
| Registration To |
IEICE-SDM |
| Conference Code |
2020-08-ICD-SDM-IST |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Polarization/charge coupling in Si ferroelectric FET and its impact on memory characteristics |
| Sub Title (in English) |
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| Keyword(1) |
Ferroelectric FET |
| Keyword(2) |
Device operation mechanism |
| Keyword(3) |
Inversion charge |
| Keyword(4) |
Quasi-static split C-V |
| Keyword(5) |
Polarization-voltage characteristics |
| Keyword(6) |
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| Keyword(7) |
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| Keyword(8) |
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| 1st Author's Name |
Kasidit Toprasertpong |
| 1st Author's Affiliation |
The University of Tokyo (Univ. Tokyo) |
| 2nd Author's Name |
Zaoyang Lin |
| 2nd Author's Affiliation |
The University of Tokyo (Univ. Tokyo) |
| 3rd Author's Name |
Tsung-En Lee |
| 3rd Author's Affiliation |
The University of Tokyo (Univ. Tokyo) |
| 4th Author's Name |
Mitsuru Takenaka |
| 4th Author's Affiliation |
The University of Tokyo (Univ. Tokyo) |
| 5th Author's Name |
Shinichi Takagi |
| 5th Author's Affiliation |
The University of Tokyo (Univ. Tokyo) |
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| Speaker |
Author-1 |
| Date Time |
2020-08-06 10:15:00 |
| Presentation Time |
45 minutes |
| Registration for |
IEICE-SDM |
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| Volume (vol) |
vol.44 |
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