| Paper Abstract and Keywords |
| Presentation |
2020-10-05 15:25
[Invited Talk]
Fabrication of the fully-epitaxial magnetoresistance device on the poly-crystalline electrode using three-dimensional integration technology
-- Progress of fully-epitaxial magnetoresistance devices --
Yuya Sakuraba, Jiamin Chen (NIMS), Kay Yakushiji, Yuichi Kurashima, Naoya Watanabe, Akio Fukushima, Hideki Takagi, Katsuya Kikuchi, Shinji Yuasa (AIST), Kazuhiro Hono (NIMS) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Single crystalline giant magnetoresistance (GMR) and tunneling magnetoresistance devices have been extensively studied because of not only its high magnetoresistance (MR) performance but also its ideal structure to understand fundamental properties. Recently, we observed the highest MR output in single crystalline GMR devices using metastable bcc Cu spacer or half-metallic Heusler alloy electrodes. However, because of a necessity to use unpractical MgO substrate, there is a strong obstacle for them toward practical applications. In this study, we have successfully realized the single crystalline GMR device on Si substrate and bonded it on the poly-crystalline electrode using three dimensional integration technique. This process opens up a new approach to use single crystalline MR device for practical applications. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
Spintronics / Single-crystalline magnetoresistance device / three dimensional integration technique / / / / / |
| Reference Info. |
ITE Tech. Rep., vol. 44, no. 25, MMS2020-50, pp. 21-25, Oct. 2020. |
| Paper # |
MMS2020-50 |
| Date of Issue |
2020-09-28 (MMS) |
| ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
| Download PDF |
|