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Paper Abstract and Keywords
Presentation 2020-10-05 15:25
[Invited Talk] Fabrication of the fully-epitaxial magnetoresistance device on the poly-crystalline electrode using three-dimensional integration technology -- Progress of fully-epitaxial magnetoresistance devices --
Yuya Sakuraba, Jiamin Chen (NIMS), Kay Yakushiji, Yuichi Kurashima, Naoya Watanabe, Akio Fukushima, Hideki Takagi, Katsuya Kikuchi, Shinji Yuasa (AIST), Kazuhiro Hono (NIMS)
Abstract (in Japanese) (See Japanese page) 
(in English) Single crystalline giant magnetoresistance (GMR) and tunneling magnetoresistance devices have been extensively studied because of not only its high magnetoresistance (MR) performance but also its ideal structure to understand fundamental properties. Recently, we observed the highest MR output in single crystalline GMR devices using metastable bcc Cu spacer or half-metallic Heusler alloy electrodes. However, because of a necessity to use unpractical MgO substrate, there is a strong obstacle for them toward practical applications. In this study, we have successfully realized the single crystalline GMR device on Si substrate and bonded it on the poly-crystalline electrode using three dimensional integration technique. This process opens up a new approach to use single crystalline MR device for practical applications.
Keyword (in Japanese) (See Japanese page) 
(in English) Spintronics / Single-crystalline magnetoresistance device / three dimensional integration technique / / / / /  
Reference Info. ITE Tech. Rep., vol. 44, no. 25, MMS2020-50, pp. 21-25, Oct. 2020.
Paper # MMS2020-50 
Date of Issue 2020-09-28 (MMS) 
ISSN Print edition: ISSN 1342-6893  Online edition: ISSN 2424-1970
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Conference Information
Committee IEICE-MRIS MMS  
Conference Date 2020-10-05 - 2020-10-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Recording Head, Spintronics, Solid State Memory, Media, etc. 
Paper Information
Registration To MMS 
Conference Code 2020-10-MRIS-MMS 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of the fully-epitaxial magnetoresistance device on the poly-crystalline electrode using three-dimensional integration technology 
Sub Title (in English) Progress of fully-epitaxial magnetoresistance devices 
Keyword(1) Spintronics  
Keyword(2) Single-crystalline magnetoresistance device  
Keyword(3) three dimensional integration technique  
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1st Author's Name Yuya Sakuraba  
1st Author's Affiliation National Institute for Materials Research (NIMS)
2nd Author's Name Jiamin Chen  
2nd Author's Affiliation National Institute for Materials Research (NIMS)
3rd Author's Name Kay Yakushiji  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Yuichi Kurashima  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Naoya Watanabe  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Akio Fukushima  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
7th Author's Name Hideki Takagi  
7th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
8th Author's Name Katsuya Kikuchi  
8th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
9th Author's Name Shinji Yuasa  
9th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
10th Author's Name Kazuhiro Hono  
10th Author's Affiliation National Institute for Materials Research (NIMS)
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Speaker
Date Time 2020-10-05 15:25:00 
Presentation Time 50 
Registration for MMS 
Paper # ITE-MMS2020-50 
Volume (vol) ITE-44 
Number (no) no.25 
Page pp.21-25 
#Pages ITE-5 
Date of Issue ITE-MMS-2020-09-28 


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