| Paper Abstract and Keywords |
| Presentation |
2021-01-22 11:30
Evaluation of deep level by small signal equivalent circuit analysis of GaN HEMT
Takumi Nishimura, Masaya Tabuchi (Saga Univ.), Yutaro Yamaguchi, Tomohiro Otsuka, Shintaro Shinjo, Yutaro Yamanaka (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Although GaN HEMTs have been put to practical use as microwave high-power amplifiers, it is necessary to elucidate the effects of deep levels existing in HEMTs on electrical characteristics in order to realize the potential of materials. This time, we investigated the effect of the deep level that was regarded as an equivalent circuit (trap circuit) on the frequency characteristics of HEMT. As a result of inserting a trap circuit consisting of a resistor, a capacitor, and a current source between each terminal and calculating the frequency response of the Y parameter, the effect of the trap circuit appeared on Y21 and Y22 in the case of between the drain and source. In the case of between gate and drain, signals were observed at Y11 and Y21. Between the gate and source, Y11 was affected, but the trap circuit on the Y12 signal was not affected. As described above, the relationship between the trap and the frequency characteristic is clarified, and it is considered to be useful information for improving the performance of microwaves. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
Microwave / GaN HEMT / Trap / Small signal equivalent circuit / Y parameter / / / |
| Reference Info. |
ITE Tech. Rep., vol. 45, no. 1, BCT2021-2, pp. 5-8, Jan. 2021. |
| Paper # |
BCT2021-2 |
| Date of Issue |
2021-01-15 (BCT) |
| ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
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