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Paper Abstract and Keywords
Presentation 2021-01-22 11:30
Evaluation of deep level by small signal equivalent circuit analysis of GaN HEMT
Takumi Nishimura, Masaya Tabuchi (Saga Univ.), Yutaro Yamaguchi, Tomohiro Otsuka, Shintaro Shinjo, Yutaro Yamanaka (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) Although GaN HEMTs have been put to practical use as microwave high-power amplifiers, it is necessary to elucidate the effects of deep levels existing in HEMTs on electrical characteristics in order to realize the potential of materials. This time, we investigated the effect of the deep level that was regarded as an equivalent circuit (trap circuit) on the frequency characteristics of HEMT. As a result of inserting a trap circuit consisting of a resistor, a capacitor, and a current source between each terminal and calculating the frequency response of the Y parameter, the effect of the trap circuit appeared on Y21 and Y22 in the case of between the drain and source. In the case of between gate and drain, signals were observed at Y11 and Y21. Between the gate and source, Y11 was affected, but the trap circuit on the Y12 signal was not affected. As described above, the relationship between the trap and the frequency characteristic is clarified, and it is considered to be useful information for improving the performance of microwaves.
Keyword (in Japanese) (See Japanese page) 
(in English) Microwave / GaN HEMT / Trap / Small signal equivalent circuit / Y parameter / / /  
Reference Info. ITE Tech. Rep., vol. 45, no. 1, BCT2021-2, pp. 5-8, Jan. 2021.
Paper # BCT2021-2 
Date of Issue 2021-01-15 (BCT) 
ISSN Print edition: ISSN 1342-6893  Online edition: ISSN 2424-1970
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Conference Information
Committee BCT KYUSHU IEEE-BT IEEE-AP-S-FUKUOKA  
Conference Date 2021-01-22 - 2021-01-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To BCT 
Conference Code 2021-01-BCT-KYUSHU-BT-AP-S-FUKUOKA 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluation of deep level by small signal equivalent circuit analysis of GaN HEMT 
Sub Title (in English)  
Keyword(1) Microwave  
Keyword(2) GaN HEMT  
Keyword(3) Trap  
Keyword(4) Small signal equivalent circuit  
Keyword(5) Y parameter  
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1st Author's Name Takumi Nishimura  
1st Author's Affiliation Saga University (Saga Univ.)
2nd Author's Name Masaya Tabuchi  
2nd Author's Affiliation Saga University (Saga Univ.)
3rd Author's Name Yutaro Yamaguchi  
3rd Author's Affiliation Mitsubishi Electric Corp. (Mitsubishi Electric)
4th Author's Name Tomohiro Otsuka  
4th Author's Affiliation Mitsubishi Electric Corp. (Mitsubishi Electric)
5th Author's Name Shintaro Shinjo  
5th Author's Affiliation Mitsubishi Electric Corp. (Mitsubishi Electric)
6th Author's Name Yutaro Yamanaka  
6th Author's Affiliation Mitsubishi Electric Corp. (Mitsubishi Electric)
7th Author's Name Toshiyuki Oishi  
7th Author's Affiliation Saga University (Saga Univ.)
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Speaker
Date Time 2021-01-22 11:30:00 
Presentation Time 20 
Registration for BCT 
Paper # ITE-BCT2021-2 
Volume (vol) ITE-45 
Number (no) no.1 
Page pp.5-8 
#Pages ITE-4 
Date of Issue ITE-BCT-2021-01-15 


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