| Paper Abstract and Keywords |
| Presentation |
2021-03-26 12:50
A Back Illuminated 10μm SPAD Pixel Array Comprising Full Trench Isolation and Cu-Cu Bonding with Over 14% PDE at 940nm
Kyosuke Ito, Yusuke Otake, Yoshiaki Kitano, Akira Matsumoto, Junpei Yamamoto, Takayuki Ogasahara, Hiroki Hiyama, Ryusei Naito, Kohei Takeuchi, Takanori Tada, Kosaku Takabayashi, Hajime Nakayama, Keiji Tatani, Tomoyuki Hirano, Toshifumi Wakano (SONY) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
A state of the art Back Illuminated (BI) Single Photon Avalanche Diode (SPAD) array sensor realized via a 90nm CMOS process on a 300 mm silicon platform is reported in the following. The array consists of 10 μm pixels, each using a 7μm thick silicon active layer, which allows to extend the device’s optical sensitivity up to the Near-Infrared (NIR) spectrum. Furthermore, buried metal Full Trench Isolation (FTI) was employed to suppress crosstalk (X-talk) by a neighboring pixel. Finally, in order to maximize the Fill Factor (F.F), a Cu-Cu bonding process was carried out. Through process and device design optimization, not only a Photon Detection Efficiency (PDE) greater than 14% at λ= 940nm and low timing jitter were achieved, but also the best in class Dark Count Rate (DCR) as compared to previously reported SPAD sensors. These combined features pave the way towards efficient, eye-safe and cost-effective time of flight applications. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
SPAD / Time-of-Flight / Depth Sensor / dToF / Back Illuminated / / / |
| Reference Info. |
ITE Tech. Rep., vol. 45, no. 11, IST2021-14, pp. 25-28, March 2021. |
| Paper # |
IST2021-14 |
| Date of Issue |
2021-03-19 (IST) |
| ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
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