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Paper Abstract and Keywords
Presentation 2021-06-10 15:50
Fabrication of ZnO resistive switching memory using a transparent substrate
Kana Minami, Takeo Ohno (Oita Univ.), Firman Mangasa Simanjuntak, Seiji Samukawa (Tohoku Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) One of the next-generation non-volatile memories is a resistive memory whose operating principle is an ion conduction phenomenon and an electrochemical reaction. In this memory structure oxide materials are mainly used as a switching layer in which ion conduction occurs, and among them, research on resistive switching memory using a ZnO, which is a transparent material, is being actively conducted. In this study, formation of ZnO thin film on a transparent substrate was performed by using various sputtering conditions, and it was confirmed that the sputtering power and gas pressure affects the switching characteristics such as the on/off ratio and the switching cycles. In addition, good switching characteristics were obtained by irradiating the ZnO thin film with a neutral oxygen beam generated from a plasma during a device process.
Keyword (in Japanese) (See Japanese page) 
(in English) Resistive RAM / ZnO sputtering / transparent material / neutral oxygen beam / / / /  
Reference Info. ITE Tech. Rep., vol. 45, no. 14, MMS2021-30, pp. 23-27, June 2021.
Paper # MMS2021-30 
Date of Issue 2021-06-03 (MMS) 
ISSN Print edition: ISSN 1342-6893  Online edition: ISSN 2424-1970
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Conference Information
Committee IEICE-MRIS MMS  
Conference Date 2021-06-10 - 2021-06-11 
Place (in Japanese) (See Japanese page) 
Place (in English) RIEC, Tohoku U. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Recording systems, etc. 
Paper Information
Registration To MMS 
Conference Code 2021-06-MRIS-MMS 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of ZnO resistive switching memory using a transparent substrate 
Sub Title (in English)  
Keyword(1) Resistive RAM  
Keyword(2) ZnO sputtering  
Keyword(3) transparent material  
Keyword(4) neutral oxygen beam  
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1st Author's Name Kana Minami  
1st Author's Affiliation Oita University (Oita Univ.)
2nd Author's Name Takeo Ohno  
2nd Author's Affiliation Oita University (Oita Univ.)
3rd Author's Name Firman Mangasa Simanjuntak  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Seiji Samukawa  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker
Date Time 2021-06-10 15:50:00 
Presentation Time 25 
Registration for MMS 
Paper # ITE-MMS2021-30 
Volume (vol) ITE-45 
Number (no) no.14 
Page pp.23-27 
#Pages ITE-5 
Date of Issue ITE-MMS-2021-06-03 


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