| Paper Abstract and Keywords |
| Presentation |
2021-06-10 15:50
Fabrication of ZnO resistive switching memory using a transparent substrate
Kana Minami, Takeo Ohno (Oita Univ.), Firman Mangasa Simanjuntak, Seiji Samukawa (Tohoku Univ.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
One of the next-generation non-volatile memories is a resistive memory whose operating principle is an ion conduction phenomenon and an electrochemical reaction. In this memory structure oxide materials are mainly used as a switching layer in which ion conduction occurs, and among them, research on resistive switching memory using a ZnO, which is a transparent material, is being actively conducted. In this study, formation of ZnO thin film on a transparent substrate was performed by using various sputtering conditions, and it was confirmed that the sputtering power and gas pressure affects the switching characteristics such as the on/off ratio and the switching cycles. In addition, good switching characteristics were obtained by irradiating the ZnO thin film with a neutral oxygen beam generated from a plasma during a device process. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
Resistive RAM / ZnO sputtering / transparent material / neutral oxygen beam / / / / |
| Reference Info. |
ITE Tech. Rep., vol. 45, no. 14, MMS2021-30, pp. 23-27, June 2021. |
| Paper # |
MMS2021-30 |
| Date of Issue |
2021-06-03 (MMS) |
| ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
| Download PDF |
|
| Conference Information |
| Committee |
IEICE-MRIS MMS |
| Conference Date |
2021-06-10 - 2021-06-11 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
RIEC, Tohoku U. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Recording systems, etc. |
| Paper Information |
| Registration To |
MMS |
| Conference Code |
2021-06-MRIS-MMS |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Fabrication of ZnO resistive switching memory using a transparent substrate |
| Sub Title (in English) |
|
| Keyword(1) |
Resistive RAM |
| Keyword(2) |
ZnO sputtering |
| Keyword(3) |
transparent material |
| Keyword(4) |
neutral oxygen beam |
| Keyword(5) |
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| Keyword(6) |
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| Keyword(7) |
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| 1st Author's Name |
Kana Minami |
| 1st Author's Affiliation |
Oita University (Oita Univ.) |
| 2nd Author's Name |
Takeo Ohno |
| 2nd Author's Affiliation |
Oita University (Oita Univ.) |
| 3rd Author's Name |
Firman Mangasa Simanjuntak |
| 3rd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
| 4th Author's Name |
Seiji Samukawa |
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Tohoku University (Tohoku Univ.) |
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| Speaker |
Author-1 |
| Date Time |
2021-06-10 15:50:00 |
| Presentation Time |
25 minutes |
| Registration for |
MMS |
| Paper # |
MMS2021-30 |
| Volume (vol) |
vol.45 |
| Number (no) |
no.14 |
| Page |
pp.23-27 |
| #Pages |
5 |
| Date of Issue |
2021-06-03 (MMS) |