In this study, we designed and fabricated a CMOS image sensor with a dual-layer on-pixel polarizer to improve the performance of electric field imaging using the electro-optic effect. The on-pixel polarizer is composed of the two metal wiring layers of a 0.35-?m standard CMOS process. The parameters were optimized to obtain the maximum extinction ratio at a wavelength of 780 nm. Microwave electric field imaging performed was improved by using the image sensor with the proposed on-chip polarizers.
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In this study, we designed and fabricated a CMOS image sensor with a dual-layer on-pixel polarizer to improve the performance of electric field imaging using the electro-optic effect. The on-pixel polarizer is composed of the two metal wiring layers of a 0.35-?m standard CMOS process. The parameters were optimized to obtain the maximum extinction ratio at a wavelength of 780 nm. Microwave electric field imaging performed was improved by using the image sensor with the proposed on-chip polarizers.