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Paper Abstract and Keywords
Presentation 2022-12-12 14:20
[Poster Presentation] Light-induced reliability issue of NMOS using in CMOS image sensor and single-photon avalanche diode
Chun-Hsien Liu, Sheng. Di. Lin (Institute of Electronics, NYCU)
Abstract (in Japanese) (See Japanese page) 
(in English) We present the NMOS reliability issue of increased off-current after white-light illumination. Experimental results suggest that light-induce hot electrons generated interface trap states. Enlarged off-current activated the parasitic bipolar-junction transistor. This reliability issue could be prevented with inversion layer forming in channel under a proper bias condition.
Keyword (in Japanese) (See Japanese page) 
(in English) light-induced reliability / parasitic BJT action / CMOS image sensor / single-photon avalanche diode (SPAD) / transistor degradation / / /  
Reference Info. ITE Tech. Rep., vol. 46, no. 41, IST2022-52, pp. 39-40, Dec. 2022.
Paper # IST2022-52 
Date of Issue 2022-12-05 (IST) 
ISSN Print edition: ISSN 1342-6893    Online edition: ISSN 2424-1970
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Conference Information
Committee IST  
Conference Date 2022-12-12 - 2022-12-13 
Place (in Japanese) (See Japanese page) 
Place (in English) Sanaru Hall 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 5th International Workshop on Image Sensors and Imaging Systems (IWISS2022) 
Paper Information
Registration To IST 
Conference Code 2022-12-IST 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Light-induced reliability issue of NMOS using in CMOS image sensor and single-photon avalanche diode 
Sub Title (in English)  
Keyword(1) light-induced reliability  
Keyword(2) parasitic BJT action  
Keyword(3) CMOS image sensor  
Keyword(4) single-photon avalanche diode (SPAD)  
Keyword(5) transistor degradation  
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1st Author's Name Chun-Hsien Liu  
1st Author's Affiliation Institute of Electronics, National Yang Ming Chiao Tung Universi (Institute of Electronics, NYCU)
2nd Author's Name Sheng. Di. Lin  
2nd Author's Affiliation Institute of Electronics, National Yang Ming Chiao Tung Universi (Institute of Electronics, NYCU)
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Speaker Author-1 
Date Time 2022-12-12 14:20:00 
Presentation Time 90 minutes 
Registration for IST 
Paper # IST2022-52 
Volume (vol) vol.46 
Number (no) no.41 
Page pp.39-40 
#Pages
Date of Issue 2022-12-05 (IST) 


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