We present the NMOS reliability issue of increased off-current after white-light illumination. Experimental results suggest that light-induce hot electrons generated interface trap states. Enlarged off-current activated the parasitic bipolar-junction transistor. This reliability issue could be prevented with inversion layer forming in channel under a proper bias condition.
(英)
We present the NMOS reliability issue of increased off-current after white-light illumination. Experimental results suggest that light-induce hot electrons generated interface trap states. Enlarged off-current activated the parasitic bipolar-junction transistor. This reliability issue could be prevented with inversion layer forming in channel under a proper bias condition.