| Paper Abstract and Keywords |
| Presentation |
2025-08-08 11:15
[Invited Talk]
Importance of Controlling GaN MOS Interfaces
Masamichi Akazawa, Taketomo Sato (Hokkaido Univ.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
We explain the reason for expecting gallium nitride (GaN) as a candidate of next-generation power semiconductor materials. Even though obtaining an excellent MOS interface of non-silicon semiconductors is difficult, MOS structures on n-type GaN layers grown on free-standing GaN substrates exhibit excellent interface properties with a low density of interface states near the conduction band edge. It is an urgent issue to establish an appropriate interface formation process for p-type GaN MOS structures for obtaining similarly excellent interface properties with minimizing the interface states density near the valence band edge. Here, we report our recent research results on this issue. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
GaN / MIS / MOS / interface states / defect states / / / |
| Reference Info. |
ITE Tech. Rep., vol. 49, no. 21, IST2025-33, pp. 13-19, Aug. 2025. |
| Paper # |
IST2025-33 |
| Date of Issue |
2025-07-30 (IST) |
| ISSN |
Online edition: ISSN 2424-1970 |
| Download PDF |
|
| Conference Information |
| Committee |
IEICE-SDM IEICE-ICD IST |
| Conference Date |
2025-08-06 - 2025-08-08 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Hokkaido Univ. Prmaceutical of Science |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
| Paper Information |
| Registration To |
IST |
| Conference Code |
2025-08-SDM-ICD-IST |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Importance of Controlling GaN MOS Interfaces |
| Sub Title (in English) |
|
| Keyword(1) |
GaN |
| Keyword(2) |
MIS |
| Keyword(3) |
MOS |
| Keyword(4) |
interface states |
| Keyword(5) |
defect states |
| Keyword(6) |
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| Keyword(7) |
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| Keyword(8) |
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| 1st Author's Name |
Masamichi Akazawa |
| 1st Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
| 2nd Author's Name |
Taketomo Sato |
| 2nd Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
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| Speaker |
Author-1 |
| Date Time |
2025-08-08 11:15:00 |
| Presentation Time |
45 minutes |
| Registration for |
IST |
| Paper # |
IST2025-33 |
| Volume (vol) |
vol.49 |
| Number (no) |
no.21 |
| Page |
pp.13-19 |
| #Pages |
7 |
| Date of Issue |
2025-07-30 (IST) |