| Paper Abstract and Keywords |
| Presentation |
2025-09-18 13:50
Charge domain type 2.2um BSI Global Shutter pixel with Dual Depth DTI Produced by thick-film epitaxial process
Toshifumi Yokoyama, Yoshihiro Noguchi, Yoshiaki Nishi, Masafumi Tsutsui, Masahiko Takeuchi, Masahiro Oda (TPSCo), Fenigstein Amos (Tower) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
We developed a 2.2um Backside Illuminated (BSI) Global Shutter (GS) pixel with true charge-domain Correlated Double Sampling (CDS). A thick-epi deep DTI (Deep Trench Isolation) process was implemented to enhance 1/PLS (Parasitic Light Sensitivity) using a dual-depth DTI structure. This newly developed pixel represents the smallest ever charge-domain GS pixel to date. Despite its compact size, it demonstrates exceptional performance by means of Quantum Efficiency (QE), and 1/PLS. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
global shutter / BSI / Parasitic Light Sensitivity / / / / / |
| Reference Info. |
ITE Tech. Rep., vol. 49, no. 25, IST2025-40, pp. 17-20, Sept. 2025. |
| Paper # |
IST2025-40 |
| Date of Issue |
2025-09-11 (IST) |
| ISSN |
Online edition: ISSN 2424-1970 |
| Download PDF |
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| Conference Information |
| Committee |
IST |
| Conference Date |
2025-09-18 - 2025-09-18 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
|
| Paper Information |
| Registration To |
IST |
| Conference Code |
2025-09-IST |
| Language |
English |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Charge domain type 2.2um BSI Global Shutter pixel with Dual Depth DTI Produced by thick-film epitaxial process |
| Sub Title (in English) |
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| Keyword(1) |
global shutter |
| Keyword(2) |
BSI |
| Keyword(3) |
Parasitic Light Sensitivity |
| Keyword(4) |
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| 1st Author's Name |
Toshifumi Yokoyama |
| 1st Author's Affiliation |
Tower Partners Semiconductor (TPSCo) |
| 2nd Author's Name |
Yoshihiro Noguchi |
| 2nd Author's Affiliation |
Tower Partners Semiconductor (TPSCo) |
| 3rd Author's Name |
Yoshiaki Nishi |
| 3rd Author's Affiliation |
Tower Partners Semiconductor (TPSCo) |
| 4th Author's Name |
Masafumi Tsutsui |
| 4th Author's Affiliation |
Tower Partners Semiconductor (TPSCo) |
| 5th Author's Name |
Masahiko Takeuchi |
| 5th Author's Affiliation |
Tower Partners Semiconductor (TPSCo) |
| 6th Author's Name |
Masahiro Oda |
| 6th Author's Affiliation |
Tower Partners Semiconductor (TPSCo) |
| 7th Author's Name |
Fenigstein Amos |
| 7th Author's Affiliation |
Tower Semiconductor (Tower) |
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| Speaker |
Author-1 |
| Date Time |
2025-09-18 13:50:00 |
| Presentation Time |
20 minutes |
| Registration for |
IST |
| Paper # |
IST2025-40 |
| Volume (vol) |
vol.49 |
| Number (no) |
no.25 |
| Page |
pp.17-20 |
| #Pages |
4 |
| Date of Issue |
2025-09-11 (IST) |