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Paper Abstract and Keywords
Presentation 2025-10-16 16:15
Fabrication of high-quality BiFeO3-based ferromagnetic and ferroelectric thin films by pulsed DC reactive sputtering method
Satoru Yoshimura, Swati S. DAS, Genta Egawa (Akita Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) The pulsed DC reactive sputtering method is useful for fabricating high-quality oxide magnetic thin films, which often have complex crystal structures, at low oxygen partial pressures and high deposition rates. As a result of investigating the substitution elements in BiFeO3-based thin films fabricated using this method, we succeeded in realizing ferromagnetic and ferroelectric thin films with excellent magnetic properties, and we also succeeded in demonstrating magnetization switching by applying an electric field at the submicron scale, indicating the possibility of application to highly integrated and low-power magnetic devices driven by an electric field. However, it is essential to devise a method for giving the sputtering target in this film fabrication method as high an electrical conductivity as possible, and if one wishes to fabricate thin films with an excellent insulating property, it is also necessary to devise a method for increasing the oxygen content in the target while maintaining a high electrical conductivity. By using an appropriate target and the pulsed DC reactive sputtering method, various oxide magnetic thin films with characteristic properties and high functionalities can be easily fabricated with high quality, and as a result, high-performance spintronics devices will be implemented in society.
Keyword (in Japanese) (See Japanese page) 
(in English) pulsed DC reactive sputtering / oxide magnetic thin films / magnetization switching by applying an electric field / sputtering target / / / /  
Reference Info. ITE Tech. Rep., vol. 49, no. 28, MMS2025-43, pp. 4-9, Oct. 2025.
Paper # MMS2025-43 
Date of Issue 2025-10-09 (MMS) 
ISSN Online edition: ISSN 2424-1970
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Conference Information
Committee IEICE-MRIS IEICE-CPM MMS  
Conference Date 2025-10-16 - 2025-10-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Toyohashi-Gika Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Spintronics, Solid State Memory, Functional material, Thin film process, Material, Devices, etc. 
Paper Information
Registration To MMS 
Conference Code 2025-10-MRIS-CPM-MMS 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of high-quality BiFeO3-based ferromagnetic and ferroelectric thin films by pulsed DC reactive sputtering method 
Sub Title (in English)  
Keyword(1) pulsed DC reactive sputtering  
Keyword(2) oxide magnetic thin films  
Keyword(3) magnetization switching by applying an electric field  
Keyword(4) sputtering target  
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1st Author's Name Satoru Yoshimura  
1st Author's Affiliation Akita University (Akita Univ.)
2nd Author's Name Swati S. DAS  
2nd Author's Affiliation Akita University (Akita Univ.)
3rd Author's Name Genta Egawa  
3rd Author's Affiliation Akita University (Akita Univ.)
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Speaker Author-1 
Date Time 2025-10-16 16:15:00 
Presentation Time 25 minutes 
Registration for MMS 
Paper # MMS2025-43 
Volume (vol) vol.49 
Number (no) no.28 
Page pp.4-9 
#Pages
Date of Issue 2025-10-09 (MMS) 


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