| Paper Abstract and Keywords |
| Presentation |
2025-11-21 13:30
[Invited Talk]
A Novel 1/1.3-inch 50 Megapixel three-wafer-stacked CMOS Image Sensor with DNN Circuit for Edge Processing Ryoichi Nakamura, Hidenobu Tsugawa, Wataru Otsuka, Kan Shimizu, Yoshihisa Kagawa, Kenta Ono, Yosuke Horie (Sony Semiconductor Solutions) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
This study reports the first ever 3-wafer-stacked CMOS image sensor comprising an artificial intelligence (AI) chip with a deep neural network (DNN)-based circuit. The sensor was fabricated by bonding wafer with a DNN-based circuit to the bottom of a conventional 2-layer-stacked image sensor using the wafer-on-wafer-on-wafer process. This process allowed the sensor to retain excellent imaging characteristics without affecting those of the top and middle wafers. This novel image sensor comprising a DNN can enhance the gate scale and incorporate the high dynamic range (HDR) function. Moreover, the pixelarray area can be expanded to approximately the same size as that of the chip to realize a resolution of 50 MP. Thus, the proposed sensor can perform DNN processing on higher resolution HDR image data than the conventional DNN-equipped 2-layer-stacked image sensor, resulting in remarkably improved image-recognition and high-performance edge processing with a single chip. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
3-wafer-stacked CMOS image sensor / deep neural network / image-recognition / high dynamic range / / / / |
| Reference Info. |
ITE Tech. Rep., vol. 49, no. 34, IST2025-46, pp. 1-4, Nov. 2025. |
| Paper # |
IST2025-46 |
| Date of Issue |
2025-11-14 (IST) |
| ISSN |
Online edition: ISSN 2424-1970 |
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