| Paper Abstract and Keywords |
| Presentation |
2026-07-29 13:30
[Invited Talk]
Atomic Layer Deposition of High Mobility Oxide Semiconductors for Integrated Device Applications
Takanori Takahashi, Yukiharu Uraoka (NAIST) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
We report high-mobility Ga-doped In₂O₃ (poly-IGO) nanosheet FETs exhibiting excellent thickness scalability and clarify the relationship between lattice strain and electron transport properties for next-generation oxide semiconductor applications. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
Oxide Semiconductor / Ga-doped In₂O₃ / ,Nanosheet FET / High-Mobility Channel / / / / |
| Reference Info. |
ITE Tech. Rep., vol. 50, no. 20, IDY2026-35, pp. 5-9, July 2026. |
| Paper # |
IDY2026-35 |
| Date of Issue |
2026-07-22 (IDY) |
| ISSN |
Online edition: ISSN 2424-1970 |
| Download PDF |
|
| Conference Information |
| Committee |
IDY IEICE-EID SID-JC |
| Conference Date |
2026-07-29 - 2026-07-29 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Kikai-Shinko-Kaikan Bldg. +Zoom |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Information Display |
| Paper Information |
| Registration To |
IDY |
| Conference Code |
2026-07-IDY-EID-JC |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Atomic Layer Deposition of High Mobility Oxide Semiconductors for Integrated Device Applications |
| Sub Title (in English) |
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| Keyword(1) |
Oxide Semiconductor |
| Keyword(2) |
Ga-doped In₂O₃ |
| Keyword(3) |
,Nanosheet FET |
| Keyword(4) |
High-Mobility Channel |
| Keyword(5) |
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| Keyword(6) |
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| 1st Author's Name |
Takanori Takahashi |
| 1st Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
| 2nd Author's Name |
Yukiharu Uraoka |
| 2nd Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
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| Speaker |
Author-2 |
| Date Time |
2026-07-29 13:30:00 |
| Presentation Time |
25 minutes |
| Registration for |
IDY |
| Paper # |
IDY2026-35 |
| Volume (vol) |
vol.50 |
| Number (no) |
no.20 |
| Page |
pp.5-9 |
| #Pages |
5 |
| Date of Issue |
2026-07-22 (IDY) |