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Paper Abstract and Keywords
Presentation 2026-08-04 10:45
Gate-length dependence of subthreshold slope in cryogenic operation of MOSFETs
Takumi Katori (AIST/TDU), Hidehiro Asai, Hiroshi Oka, Kimihiko Kato, Takumi Inaba, Yuika Kobayashi, Takashi Nakayama (AIST), Satoshi Moriyama (TDU), Takahiro Mori (AIST)
Abstract (in Japanese) (See Japanese page) 
(in English) We experimentally found the gate-length dependence of the subthreshold swing (SS) in long-channel n- and p- MOSFETs at cryogenic temperatures and investigated its mechanism using device simulations. Considering the band-edge states and focusing on the dominance of the drift and diffusion current components in the drain current, we found that the drift component highly dominates the current even within the subthreshold current range at cryogenic temperatures. Therefore, the subthreshold swing depends on the gate length due to the gate-length dependence of the drift component. We also highlight the importance of the effect of the band-edge states, which significantly impacts the dominance ratio of the drift component in the subthreshold current range.
Keyword (in Japanese) (See Japanese page) 
(in English) cryo-CMOS / MOSFET / subthreshold swing / band-edge states / / / /  
Reference Info. ITE Tech. Rep.
Paper #  
Date of Issue  
ISSN Online edition: ISSN 2424-1970
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Conference Information
Committee IEICE-ICD IEICE-SDM IST  
Conference Date 2026-08-04 - 2026-08-06 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ, Pharmaceutical Sciences, Lecture Room 2 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications 
Paper Information
Registration To IEICE-SDM 
Conference Code 2026-08-ICD-SDM-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Gate-length dependence of subthreshold slope in cryogenic operation of MOSFETs 
Sub Title (in English)  
Keyword(1) cryo-CMOS  
Keyword(2) MOSFET  
Keyword(3) subthreshold swing  
Keyword(4) band-edge states  
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1st Author's Name Takumi Katori  
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology, Tokyo Denki University (AIST/TDU)
2nd Author's Name Hidehiro Asai  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Hiroshi Oka  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Kimihiko Kato  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Takumi Inaba  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Yuika Kobayashi  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
7th Author's Name Takashi Nakayama  
7th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
8th Author's Name Satoshi Moriyama  
8th Author's Affiliation Tokyo Denki University (TDU)
9th Author's Name Takahiro Mori  
9th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
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Speaker Author-1 
Date Time 2026-08-04 10:45:00 
Presentation Time 25 minutes 
Registration for IEICE-SDM 
Paper #  
Volume (vol) vol.50 
Number (no)  
Page  
#Pages  
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