| Paper Abstract and Keywords |
| Presentation |
2026-08-06 10:00
[Invited Talk]
A Multi-Stacked Cell Array Architecture with Wafer-to-Wafer Cu Direct Bonding for Ultra-High-Density 3D Flash Memory beyond 1,000 Word Lines
Mitsuhiko Noda, Susumu Hashimoto, Ryuta Mizumoto, Mamoru Watanabe, Genki Sawada, Kanta Kawasaki, Masahisa Sonoda, Eiji Kamiya, Tetsu Morooka, Keisuke Nakatsuka, Hiroshi Maejima, Shigeki Kobayashi, Shinji Suzuki (Kioxia), Yukihiro Sakotsubo, Kohei Osawa, Shinya Sato, Teiji Shibasaki, Masahiro Yaegashi, Ryoichi Honma (Sandisk), Masayoshi Tagami, Katsuyuki Sekine (Kioxia) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
This paper introduces multi-stacked cell array CMOS directly bonded to array (MSA-CBA) technology for ultra-high-density 3D flash memory, based on a presentation at the 2026 Symposium on VLSI Technology and Circuits [1]. To achieve higher density by stacking more word line (WL) layers, challenges such as reduced cell current, increased wafer warpage, and larger block (BLK) size must be resolved. MSA-CBA addresses these issues by stacking multiple cell array wafers on a CMOS wafer using wafer-to-wafer Cu direct bonding, thereby reducing the number of stacked word lines per wafer. This paper also presents highly reliable bonding enabled by advanced planarization and alignment correction technologies, as well as the world’s first demonstration of Quad-Level Cell (QLC) operation in a multi-stacked cell array structure. These results demonstrate that MSA-CBA is a promising architecture for 3D flash memory with over 1,000 stacked word lines. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
3D Flash Memory / MSA-CBA / Wafer-to-Wafer Cu Direct Bonding / QLC / / / / |
| Reference Info. |
ITE Tech. Rep. |
| Paper # |
|
| Date of Issue |
|
| ISSN |
Online edition: ISSN 2424-1970 |
| Download PDF |
|