| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IST, IEICE-ICD, IEICE-SDM |
2018-08-08
15:00 |
Hokkaido |
Hokkaido University M Bldg. M151 |
Study of new stacked type logic circuit scheme with fabrication technology of 3D NAND flash memory.
-- Comparison with conventional LUT system and planar type --
Fumiya Suzuki, Sigeyoshi Watanabe (Shonan Inst. of Tech.) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-09
09:30 |
Hokkaido |
Hokkaido University M Bldg. M151 |
[Invited Talk]
Flexible sensing system and venture startup
Shusuke Yoshimoto (PGV Inc.) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-09
10:15 |
Hokkaido |
Hokkaido University M Bldg. M151 |
[Invited Talk]
Non-Contact Unobtrusive Sensing of Multiple Vital Signals Using Capacitive Coupling
-- Introduction of Cutting-Edge Researches --
Akinori Ueno (Tokyo Denki Univ.) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-09
11:00 |
Hokkaido |
Hokkaido University M Bldg. M151 |
[Invited Talk]
Wearable Monitoring Systems for Heart Rate Variability Analysis
Shintaro Izumi (Osaka Univ.) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-09
12:45 |
Hokkaido |
Hokkaido University M Bldg. M151 |
Study of Impact of BTI's Local Layout Effect Including Recovery Effect on Various Standard-Cells in 10nm FinFET
Mitsuhiko Igarashi, Yuuki Uchida, Yoshio Takazawa, Yasumasa Tsukamoto, Koji Shibutani, Koji Nii (Renesas) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-09
13:10 |
Hokkaido |
Hokkaido University M Bldg. M151 |
12-nm Fin-FET 3.0G-search/s 80-bit x 128-entry Dual-port Ternary CAM
Makoto Yabuuchi, Masao Morimoto, Koji Nii, Shinji Tanaka (Renesas) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-09
13:45 |
Hokkaido |
Hokkaido University M Bldg. M151 |
Effect of multiple stress application in post-fabrication cell stability self-improvement in SRAM cell array
Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-09
14:10 |
Hokkaido |
Hokkaido University M Bldg. M151 |
Device and Process Design for HfO2-Based Ferroelectric Tunnel Junction Memory with Large Tunneling Electroresistance Effect and Multi-level Cell
Masaharu Kobayashi, Yusaku Tagawa, Mo Fei, Toshiro Hiramoto (Univ. Tokyo) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-09
14:35 |
Hokkaido |
Hokkaido University M Bldg. M151 |
[Invited Talk]
Cu Atom Switch Technology toward 28nm Nonvolatile Programmable Logic
Ryusuke Nebashi, Naoki Banno, Makoto Miyamura, Ayuka Morioka, Bai Xu, Koichiro Okamoto, Noriyuki Iguchi, Hideaki Numata, Hiromitsu Hada, Tadahiko Sugibayashi, Toshitsugu Sakamoto, Munehiro Tada (NEC) |
[more] |
|