| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IEICE-ICD, IEICE-SDM, IST [detail] |
2024-08-06
11:00 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
Understanding Abnormal Vth Increase Induced by Hot Carrier Injection at Cryogenic Temperatures
Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Kimihiko Kato, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Takahiro Mori (AIST) |
In this study, we attempted to understand the mechanisms of hot carrier degradation in cryogenic MOSFET operation. Hot c... [more] |
|
| IEICE-ICD, IEICE-SDM, IST [detail] |
2023-08-01
15:25 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
[Invited Talk]
Low-Frequency Noise Source in Cryogenic Operation of Short-Channel Bulk MOSFETs
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST) |
[more] |
|
| IEICE-ICD, IEICE-SDM, IST [detail] |
2023-08-01
16:10 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
Additional High-Pressure Hydrogen Annealing Improving the Cryogenic Operation of Si (110)-oriented n-MOSFETs
Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Takumi Inaba, Shota Iizuka, Kimihiko Kato, Takahiro Mori (AIST) |
[more] |
|
| IEICE-ICD, IEICE-SDM, IST [detail] |
2023-08-01
16:35 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
Analysis of back bias effects and history phenomena in cryo 200nm SOIMOSFETs
Ryusei Ri, Takayuki Mori (KIT), Hiroshi Oka, Takahiro Mori (AIST), Jiro Ida (KIT) |
[more] |
|
| IEICE-MRIS, MMS |
2022-12-08
13:30 |
Ehime |
Ehime Univ. + Online
(Primary: On-site, Secondary: Online) |
3D magnetic memory with artificial ferromagnet
Teruo Ono, Yu Min Hung, Heechan Jang, Feifan Ye, Ryosuke Hisatomi, Shiota Youichi, Takahiro Moriyama (Kyoto Univ.) |
[more] |
|
| IEICE-ICD, IEICE-SDM, IST [detail] |
2022-08-09
11:05 |
Online |
On-line |
[Invited Talk]
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation
Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) |
[more] |
|
| IEICE-ICD, IEICE-SDM, IST [detail] |
2022-08-09
11:50 |
Online |
On-line |
TCAD Analysis for threshold voltage increase in cryogenic MOSFET operation
Hidehiro Asai, Takumi Inaba, Junichi Hattori, Koichi Fukuda, Hiroshi Oka, Takahiro Mori (AIST) |
[more] |
|
| IEICE-SDM, IEICE-ICD, IST [detail] |
2021-08-17
10:15 |
Online |
Online |
[Invited Talk]
Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers
Shota Iizuka, Kimihiko Kato, Atsushi Yagishita, Hidehiro Asai, Tetsuya Ueda, Hiroshi Oka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Takahiro Mori (AIST) |
[more] |
|
| BCT, IEEE-BT |
2020-09-04
13:10 |
Online |
Online |
A study of LDM system for DTTB
-- Production of modulator and demodulator --
Kazuki Imamura, Takeshi Anazawa, Hiromasa Okada, Takahiro Mori, Tomomi Fukazawa, Toru Takabayashi, Yasubumi Honma, Yutaka Shibata (TBS) |
We have proposed a method of providing both current 2K and 4K broadcasting service on the same timing and on the same fr... [more] |
BCT2020-61
pp.1-4 |
| BCT, IEEE-BT |
2020-09-04
13:35 |
Online |
Online |
A study of LDM system for DTTB
-- Evaluation of transmission characterristic --
Hiromasa Okada, kazuki Imamura, Takeshi Anazawa, Takahiro Mori, Tomomi Fukazawa, Toru Takabayashi, Yasubumi Honma, Yutaka Shibata (TBS) |
We have proposed a method of providing both current 2K and 4K broadcasting service on the same timing and on the same fr... [more] |
BCT2020-62
pp.5-8 |
| IEICE-ICD, IEICE-SDM, IST [detail] |
2020-08-07
09:30 |
Online |
Online |
[Invited Talk]
Understanding the Origin of Low-frequency Noise in Cryo-CMOS Toward Long-coherence-time Si Spin Qubit
Hiroshi Oka, Takashi Matsukawa, Kimihiko Kato, Shota Iizuka, Wataru Mizubayashi, Kazuhiko Endo, Tetsuji Yasuda, Takahiro Mori (AIST) |
[more] |
|
| IEICE-SDM, IEICE-ICD, IST [detail] |
2017-07-31
12:00 |
Hokkaido |
Hokkaido-Univ. Multimedia Education Bldg. |
TCAD Simulation of C-TFET Circuit with Drain Offset Structure
Hidehiro Asai, Takahiro Mori, Junich Hattori, Takashi Matsukawa, Koichi Fukuda (AIST) |
[more] |
|
| IEICE-ICD, IEICE-SDM, IST [detail] |
2016-08-03
09:00 |
Osaka |
Central Electric Club |
[Invited Talk]
SRAM PUF using Polycrystalline Silicon Channel FinFET and Its Evaluation
Shin-ichi O'uchi, Yungxun Liu, Yohei Hori, Toshifumi Irisawa, Hiroshi Fuketa, Yukinori Morita, Shinji Migita, Takahiro Mori, Tadashi Nakagawa, Junichi Tsukada, Hanpei Koike, Meishoku Masahara, Takashi Matsukawa (AIST) |
[more] |
|
| BCT, IEEE-BT |
2013-07-25
16:00 |
Hokkaido |
|
The Development of 3D-Strike-Zone Visualization
Takahiro Mori (TBS) |
[more] |
BCT2013-79
pp.49-52 |
| IEICE-MRIS, MMS |
2011-11-18
15:00 |
Tokyo |
Waseda Univ. |
An Areal-Density Capability Study of SMR by using improved Write and Read Heads
Takeo Kagami, Hiroshi Kiyono, Osamu Nakada, Takahiro Mori, Kei Hirata, Kenkichi Anagawa, Nobutaka Nishio, Takumi Uesugi, Takahiko Machita, Naomichi Degawa, Taro Oike (TDK) |
[more] |
|
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