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Paper Abstract and Keywords
Presentation 2022-08-09 11:50
TCAD Analysis for threshold voltage increase in cryogenic MOSFET operation
Hidehiro Asai, Takumi Inaba, Junichi Hattori, Koichi Fukuda, Hiroshi Oka, Takahiro Mori (AIST)
Abstract (in Japanese) (See Japanese page) 
(in English) (Not available yet)
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Reference Info. ITE Tech. Rep.
Paper #  
Date of Issue  
ISSN Print edition: ISSN 1342-6893  Online edition: ISSN 2424-1970
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Conference Information
Committee IEICE-ICD IEICE-SDM IST  
Conference Date 2022-08-08 - 2022-08-10 
Place (in Japanese) (See Japanese page) 
Place (in English) On-line 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications 
Paper Information
Registration To IEICE-SDM 
Conference Code 2022-08-ICD-SDM-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) TCAD Analysis for threshold voltage increase in cryogenic MOSFET operation 
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1st Author's Name Hidehiro Asai  
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
2nd Author's Name Takumi Inaba  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Junichi Hattori  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Koichi Fukuda  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Hiroshi Oka  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Takahiro Mori  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
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Speaker
Date Time 2022-08-09 11:50:00 
Presentation Time 25 
Registration for IEICE-SDM 
Paper #  
Volume (vol) 46 
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