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Paper Abstract and Keywords
Presentation
2022-08-09 11:50
TCAD Analysis for threshold voltage increase in cryogenic MOSFET operation
Hidehiro Asai
,
Takumi Inaba
,
Junichi Hattori
,
Koichi Fukuda
,
Hiroshi Oka
,
Takahiro Mori
(
AIST
)
Abstract
(in Japanese)
(See Japanese page)
(in English)
(Not available yet)
Keyword
(in Japanese)
(See Japanese page)
(in English)
/ / / / / / /
Reference Info.
ITE Tech. Rep.
Paper #
Date of Issue
ISSN
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Conference Information
Committee
IEICE-ICD IEICE-SDM IST
Conference Date
2022-08-08 - 2022-08-10
Place (in Japanese)
(See Japanese page)
Place (in English)
On-line
Topics (in Japanese)
(See Japanese page)
Topics (in English)
Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications
Paper Information
Registration To
IEICE-SDM
Conference Code
2022-08-ICD-SDM-IST
Language
Japanese
Title (in Japanese)
(See Japanese page)
Sub Title (in Japanese)
(See Japanese page)
Title (in English)
TCAD Analysis for threshold voltage increase in cryogenic MOSFET operation
Sub Title (in English)
Keyword(1)
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1st Author's Name
Hidehiro Asai
1st Author's Affiliation
National Institute of Advanced Industrial Science and Technology
(
AIST
)
2nd Author's Name
Takumi Inaba
2nd Author's Affiliation
National Institute of Advanced Industrial Science and Technology
(
AIST
)
3rd Author's Name
Junichi Hattori
3rd Author's Affiliation
National Institute of Advanced Industrial Science and Technology
(
AIST
)
4th Author's Name
Koichi Fukuda
4th Author's Affiliation
National Institute of Advanced Industrial Science and Technology
(
AIST
)
5th Author's Name
Hiroshi Oka
5th Author's Affiliation
National Institute of Advanced Industrial Science and Technology
(
AIST
)
6th Author's Name
Takahiro Mori
6th Author's Affiliation
National Institute of Advanced Industrial Science and Technology
(
AIST
)
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Speaker
Author-1
Date Time
2022-08-09 11:50:00
Presentation Time
25 minutes
Registration for
IEICE-SDM
Paper #
Volume (vol)
vol.46
Number (no)
Page
#Pages
Date of Issue
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