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Paper Abstract and Keywords
Presentation 2020-12-02 14:00
Improvement of Al2O3/GaN MOS Characteristics using Bilayer Structure
Sho Sonehara, Mutsunori Uenuma, Yukiharu Uraoka (NAIST)
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Reference Info. ITE Tech. Rep.
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Date of Issue  
ISSN Print edition: ISSN 1342-6893  Online edition: ISSN 2424-1970
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Conference Information
Committee IEICE-EID IEICE-SDM IDY  
Conference Date 2020-12-02 - 2020-12-02 
Place (in Japanese) (See Japanese page) 
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Paper Information
Registration To IEICE-SDM 
Conference Code 2020-12-EID-SDM-IDY 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Improvement of Al2O3/GaN MOS Characteristics using Bilayer Structure 
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1st Author's Name Sho Sonehara  
1st Author's Affiliation Nara Institute of Science and Technology (NAIST)
2nd Author's Name Mutsunori Uenuma  
2nd Author's Affiliation Nara Institute of Science and Technology (NAIST)
3rd Author's Name Yukiharu Uraoka  
3rd Author's Affiliation Nara Institute of Science and Technology (NAIST)
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Speaker
Date Time 2020-12-02 14:00:00 
Presentation Time 20 
Registration for IEICE-SDM 
Paper #  
Volume (vol) ITE-44 
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