| Paper Abstract and Keywords |
| Presentation |
2026-03-27 10:55
A Back-illuminated 10 μm-pitch SPAD Depth Sensor with 42.5% PDE at 940 nm using an Optimized Doping Design Shohei Shimada, Yusuke Otake, Junki Suzuki, Aoi Magori, Kenji Kurata, Tomonori Matsui, Ryoya Tsuchida (Sony Semiconductor Solutions), Mutsumi Okazaki (Sony), Kaito Yokochi, Toshihito Iwase, Hiroaki Takase, Fumihiko Koga, Jun Ogi (Sony Semiconductor Solutions), Hidenori Maeda, Koji Moriyama, Hideyuki Honda (Sony Semiconductor Manufacturing), Kaoru Fujisawa, Takahiro Miura, Hiroaki Kouketsu, Toshifumi Wakano (Sony Semiconductor Solutions) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
(Not available yet) |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
Single Photon Avalanche Diode / SPAD depth sensor / d-ToF / Back Illuminated / / / / |
| Reference Info. |
ITE Tech. Rep., vol. 50, no. 14, IST2026-16, pp. 28-31, March 2026. |
| Paper # |
IST2026-16 |
| Date of Issue |
2026-03-20 (IST) |
| ISSN |
Online edition: ISSN 2424-1970 |
| Download PDF |
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