| Paper Abstract and Keywords |
| Presentation |
2026-03-27 13:10
Silicon-on-Insulator Pixel FinFET Technology for a High Conversion Gain and Low Dark Noise 2-Layer Transistor Pixel Stacked CIS Ryohei Takayanagi, Takashi Kamo, Ryosuke Yamachi, Mayu Sakurai, Hidetoshi Oishi, Takuya Iriguchi, Hiroshi Takahashi, Taikei Enomoto, Yuki Kageyama, Yusuke Tanaka, Yoshiaki Kikuchi, Junpei Yamamoto, hideomi kumano, Shinichi Yoshida, Yoshiaki Kitano, Kazunobu Ohta, Tomoyuki Hirano (Sony Semiconductor Solutions) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
This study presents a 2-Layer transistor pixel stacked 0.8-µm dual-pixel (DP) CIS with silicon-on-insulator (SOI) fin field-effect transistor (FinFET) technology. The application of SOI FinFETs as pixel transistors, featuring a body-less configuration on buried oxide, reduces parasitic capacitance at the floating diffusion node, thereby enhancing conversion gain and noise characteristics. The SOI FinFET achieves improved transconductance and source follower gain compared to a previous pixel FinFET. The resolution of challenges associated with the SOI structure is demonstrated through a 0.8μm DP CIS with SOI FinFETs. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
2-Layer Transistor Pixel Stacked CIS / SOI Pixel FinFET / High Conversion Gain / Low Dark Noise / / / / |
| Reference Info. |
ITE Tech. Rep., vol. 50, no. 14, IST2026-19, pp. 40-43, March 2026. |
| Paper # |
IST2026-19 |
| Date of Issue |
2026-03-20 (IST) |
| ISSN |
Online edition: ISSN 2424-1970 |
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