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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
IEICE-SDM, IEICE-ICD, IST [detail] 2019-08-08
10:00
Hokkaido Hokkaido Univ., Graduate School /Faculty of Information Science and Application of Extreme Value Theory to Statistical Analyses of Worst Case SRAM Data Retention Voltage
Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo)
 [more]
IST, IEICE-ICD, IEICE-SDM 2018-08-08
09:45
Hokkaido Hokkaido University M Bldg. M151 Understanding Temperature Effect on Subthreshold Slope Variability in Bulk and SOTB MOSFETs
Shuang Gao, Tomoko Mizutani, Kiyoshi Takeuchi, Masaharu Kobayashi, Toshiro Hiramoto (Univ. Tokyo)
 [more]
IST, IEICE-ICD, IEICE-SDM 2018-08-09
13:45
Hokkaido Hokkaido University M Bldg. M151 Effect of multiple stress application in post-fabrication cell stability self-improvement in SRAM cell array
Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo)
 [more]
IEICE-SDM, IEICE-ICD, IST [detail] 2017-08-01
09:45
Hokkaido Hokkaido-Univ. Multimedia Education Bldg. Parallel Programming of Non-volatile Power-up States of SRAM
Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya (Univ. of Tokyo), Hirofumi Shinohara (Waseda Univ.), Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo)
 [more]
IEICE-ICD, IEICE-SDM, IST [detail] 2016-08-03
15:05
Osaka Central Electric Club Increased Drain-Induced Variability and Within-Device Variability in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm
Tomoko Mizutani, Kiyoshi Takeuchi, Ryota Suzuki, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo)
The effects of drain voltage in threshold voltage variability in extremely narrow silicon nanowire (NW) channel FETs are... [more]
 Results 1 - 5 of 5  /   
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