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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
IDY, IEICE-EID, SID-JC [detail] 2022-07-29
16:10
Online Online [Invited Talk] Advanced Hybrid Process with Back Contact IGZO-TFT
Masatomo Honjo, Yujiro Takeda, Mehadi Aman, Kazuatsu Ito, Kohei Tanaka, Hiroshi Matsukizono, Wataru Nakamura (SDTC)
We propose the new structure of hybrid backplane technology with IGZO-TFT and LTPS. In this structure, IGZO is directly ... [more] IDY2022-29
pp.35-37
IDY, IEICE-EID, IEIJ-SSL, SID-JC, IEE-EDD [detail] 2020-01-24
11:10
Tottori Tottori Univ [Poster Presentation] Physical properties of anodized aluminum oxide for low temperature processed IGZO thin-film transistors.
Kono Shuya, Mori Marin, Koretomo Daichi, Furuta Mamoru (KUT)
(To be available after the conference date) [more]
IDY 2018-03-08
15:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Photo-Induced Transient Spectroscopy Study on Hydrogen-Related Trap States in a-IGZO-TFTs induced during TFT Fabrication Process
Kazushi Hayashi, Mototaka Ochi, Aya Hino, Hiroshi Goto, Toshihiro Kugimiya (Kobe Steel)
Hydrogen-related trap states induced during a-IGZO TFT fabrication process were examined. The a-IGZO TFTs with various E... [more] IDY2018-19
pp.21-26
IDY 2018-03-08
16:15
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Simulation Study of Novel Thin-Film Devices Using Depletion State of Amorphous Oxide Semiconductor
Katsumi Abe, Masato Fujinaga, Takeshi Kuwagaki (Silvaco Japan)
Novel thin-film devices using amorphous oxide semiconductor (AOS) were studied via device simulation. The simulation of ... [more] IDY2018-22
pp.37-41
IDY, IEICE-EID, SID-JC [detail] 2016-08-02
15:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Development of a 27-in. 8K x 4K Liquid-Crystal Display Using an InGaZnO TFT Backplane
Shigeyuki Yamada, Fumikazu Shimoshikiryoh, Yasuhisa Itoh, Atsushi Ban (Sharp Corp.)
We have successfully developed 27inch 8K4K Liquid Crystal display by utilizing BCE IGZO (Back Channel Etched InGaZnO) tr... [more] IDY2016-36
pp.27-30
IDY, IEICE-EID 2013-07-17
10:45
Tokyo Kikai-Shinko-Kaikan Bldg. Report on SID2013 -- OLED Displays and Lightings --
Toshiyuki Isa (SEL)
This paper reports OLED Display and Lighting technology shown in SID2013. [more]
IDY, IEICE-EID, IEE-EDD 2013-01-25
10:10
Shizuoka Shizuoka Univ. Fabrication and properties of Oxide TFT with an IGZO/AlOx stack prepared by non-vacuum process "mist CVD"
Toshiyuki Kawaharamura, Takayuki Uchida, Dapeng Wang, Masaru Sanada, Mamoru Furuta (KUT)
Last year, oxide TFT consisting of channel layer (IGZO) (47 nm) and gate insulator (AlOx) (116 nm) was fabricated by mis... [more] IDY2013-8
pp.73-76
 Results 1 - 7 of 7  /   
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