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All Technical Committee Conferences (Searched in: All Years)
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| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IDY, IEICE-EID, IEIJ-SSL, SID-JC, IEE-EDD [detail] |
2020-01-24
11:10 |
Tottori |
Tottori Univ |
[Poster Presentation]
Physical properties of anodized aluminum oxide for low temperature processed IGZO thin-film transistors.
Kono Shuya, Mori Marin, Koretomo Daichi, Furuta Mamoru (KUT) |
(To be available after the conference date) [more] |
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| IEICE-EID, IEICE-SDM, IDY [detail] |
2018-12-25
15:30 |
Kyoto |
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IGZO thin film synapse for brain type integrated system
Yuki Shibayama, Daiki Yamakawa, Keisuke Ikushima, Sumio Sugisaki, Mutsumi Kimura (Ryukoku Univ.), Yasuhiko Nakashima (Nara Institute of Science and Technology) |
We are researching and developing neural networks using thin film devices.In this study, we fabricated In-Ga-Zn-O (IGZO)... [more] |
IDY2018-63
pp.49-52 |
| IDY |
2018-03-08
15:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Photo-Induced Transient Spectroscopy Study on Hydrogen-Related Trap States in a-IGZO-TFTs induced during TFT Fabrication Process
Kazushi Hayashi, Mototaka Ochi, Aya Hino, Hiroshi Goto, Toshihiro Kugimiya (Kobe Steel) |
Hydrogen-related trap states induced during a-IGZO TFT fabrication process were examined. The a-IGZO TFTs with various E... [more] |
IDY2018-19
pp.21-26 |
| IDY |
2018-03-08
16:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Simulation Study of Novel Thin-Film Devices Using Depletion State of Amorphous Oxide Semiconductor
Katsumi Abe, Masato Fujinaga, Takeshi Kuwagaki (Silvaco Japan) |
Novel thin-film devices using amorphous oxide semiconductor (AOS) were studied via device simulation. The simulation of ... [more] |
IDY2018-22
pp.37-41 |
| IDY, IEICE-EID, IEE-EDD |
2013-01-25
10:10 |
Shizuoka |
Shizuoka Univ. |
Fabrication and properties of Oxide TFT with an IGZO/AlOx stack prepared by non-vacuum process "mist CVD"
Toshiyuki Kawaharamura, Takayuki Uchida, Dapeng Wang, Masaru Sanada, Mamoru Furuta (KUT) |
Last year, oxide TFT consisting of channel layer (IGZO) (47 nm) and gate insulator (AlOx) (116 nm) was fabricated by mis... [more] |
IDY2013-8
pp.73-76 |
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