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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
IDY, IEICE-EID, IEIJ-SSL, SID-JC, IEE-EDD [detail] 2020-01-24
11:10
Tottori Tottori Univ [Poster Presentation] Physical properties of anodized aluminum oxide for low temperature processed IGZO thin-film transistors.
Kono Shuya, Mori Marin, Koretomo Daichi, Furuta Mamoru (KUT)
(To be available after the conference date) [more]
IEICE-EID, IEICE-SDM, IDY [detail] 2018-12-25
15:30
Kyoto   IGZO thin film synapse for brain type integrated system
Yuki Shibayama, Daiki Yamakawa, Keisuke Ikushima, Sumio Sugisaki, Mutsumi Kimura (Ryukoku Univ.), Yasuhiko Nakashima (Nara Institute of Science and Technology)
We are researching and developing neural networks using thin film devices.In this study, we fabricated In-Ga-Zn-O (IGZO)... [more] IDY2018-63
pp.49-52
IDY 2018-03-08
15:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Photo-Induced Transient Spectroscopy Study on Hydrogen-Related Trap States in a-IGZO-TFTs induced during TFT Fabrication Process
Kazushi Hayashi, Mototaka Ochi, Aya Hino, Hiroshi Goto, Toshihiro Kugimiya (Kobe Steel)
Hydrogen-related trap states induced during a-IGZO TFT fabrication process were examined. The a-IGZO TFTs with various E... [more] IDY2018-19
pp.21-26
IDY 2018-03-08
16:15
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Simulation Study of Novel Thin-Film Devices Using Depletion State of Amorphous Oxide Semiconductor
Katsumi Abe, Masato Fujinaga, Takeshi Kuwagaki (Silvaco Japan)
Novel thin-film devices using amorphous oxide semiconductor (AOS) were studied via device simulation. The simulation of ... [more] IDY2018-22
pp.37-41
IDY, IEICE-EID, IEE-EDD 2013-01-25
10:10
Shizuoka Shizuoka Univ. Fabrication and properties of Oxide TFT with an IGZO/AlOx stack prepared by non-vacuum process "mist CVD"
Toshiyuki Kawaharamura, Takayuki Uchida, Dapeng Wang, Masaru Sanada, Mamoru Furuta (KUT)
Last year, oxide TFT consisting of channel layer (IGZO) (47 nm) and gate insulator (AlOx) (116 nm) was fabricated by mis... [more] IDY2013-8
pp.73-76
 Results 1 - 5 of 5  /   
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