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| Chair |
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Takashi Tokuda (Inst. of Science Tokyo) |
| Secretary |
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Rihito Kuroda (Tohoku Univ.), Mamoru Sato (Sony Semiconductor Solutions), Daiki Shirahige (Canon), Takaharu Tani (Olympus Medical Systems) |
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| Conference Date |
Fri, Mar 27, 2026 09:00 - 17:00 |
| Topics |
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| Conference Place |
Kikaishinko-kaikan, 3rd basement floor, training room 2 (+Online) |
| Registration Fee |
This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on IST. |
| Due for Registration |
Please proceed the payment of registration fee by 3 days before the workshop date. The meeting URL will be announce from one of the secretaries of the committee via e-mail, just before the workshop date. |
Fri, Mar 27 AM
09:00 - 17:00 |
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Opening |
| (1) |
09:00-09:25 |
A global shutter burst CMOS image sensor with 6-Tpixels readout speed, 256-recording frames and -170dB parasitic light sensitivity |
Masuto Kitamura, Yasunori Kawaguchi (Shimadzu Corp.), Naoya Kuriyama (Lapis), Tomoaki Maeda, Toshifumi Imamura (A-R-Tec), Takezo Mawaki, Shigetoshi Sugawa, Rihito Kuroda (Tohoku Univ.) |
| (2) |
09:25-09:40 |
A Single-Slope ADC CMOS Image Sensor Based on a Distributed Architecture of Stepless-Acceleration Ramp Generators |
Hayato Sakoda, Toshinori Otaka, Shunichi Sato, Takayuki Hamamoto (TUS) |
| (3) |
09:40-09:55 |
Evaluation of Interference Noise in Wireless-Powered CMOS Image Sensors |
Shunki Oyama, Koki Okada (Ritsumeikan Univ.), Ken Miyauchi (Brillnics Japan/ Ritsumeikan Univ), Hideki Owada, Chia-Chi Kuo, Isao Takayanagi (Brillnics Japan), Ami Tabaka, Fumiya Nishimura, Shunsuke Okura (Ritsumeikan Univ.) |
| (4) |
09:55-10:20 |
A 0.8μm 32Mpixel Always-On CMOS Image Sensor with Windmill-Pattern Edge Extraction and On-Chip DNN |
Mamoru Sato, Sachio Akebono, Kazuyoshi Yasuoka, Eriko Kato, Masahiro Tsuruta, Kensuke Ota, Kazuki Haraguchi, Masahiro Watanabe, Genki Fujii, Koichiro Yamanaka, Kazunori Yasuda, Satoshi Minami, Katsuhiko Hanzawa, Kohei Matsuda, Akihiko Kato, Yosuke Ueno (SSS) |
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10:20-10:30 |
Break ( 10 min. ) |
| (5) |
10:30-10:55 |
A Novel Double Cathode SPAD for Drastic Reduction of Charge per Event and Dark Noise |
Mahito Shinohara, Hiroshi Sekine, Daiki Shirahige, Hajime Ikeda, Takeru Sakamoto, Abdelghafar Aymantarek, Kizashi Mikami, Kazuma Inoue, Alice Ehara, Yoshiki Kato, Kazuhiro Morimoto, Junji Iwata, Yasushi Matsuno, Katsuhito Sakurai, Takeshi Ichikawa (Canon) |
| (6) |
10:55-11:20 |
A Back-illuminated 10 μm-pitch SPAD Depth Sensor with 42.5% PDE at 940 nm using an Optimized Doping Design |
Shohei Shimada, Yusuke Otake, Junki Suzuki, Aoi Magori, Kenji Kurata, Tomonori Matsui, Ryoya Tsuchida (Sony Semiconductor Solutions), Mutsumi Okazaki (Sony), Kaito Yokochi, Toshihito Iwase, Hiroaki Takase, Fumihiko Koga, Jun Ogi (Sony Semiconductor Solutions), Hidenori Maeda, Koji Moriyama, Hideyuki Honda (Sony Semiconductor Manufacturing), Kaoru Fujisawa, Takahiro Miura, Hiroaki Kouketsu, Toshifumi Wakano (Sony Semiconductor Solutions) |
| (7) |
11:20-11:45 |
10 µm Pitch Ge-on-Si SPAD Pixel Array with PDE of 33.8% at 1300 nm and 23.3% at 1550 nm under Room Temperature Environment |
Satoru Yoshida, Shohei Shimada, Atsushi Matsuzaki, Sylvia Loo Mei Lin, Yusuke Otake, Tetsuji Nagayama, Soichi Ochiai, Takashi Tange, Ken Sasaki, Atsuhito Yasui, Kaito Yokochi, Hiroaki Takase, Katsuaki Sasaki, Masaru Miyashita, Tetsu Ono (Sony Semiconductor Solutions), Kazuma Takahashi, Hirotaka Tanaka, Ryu Sasaki, So Mitoma (Sony Semiconductor Manufacturing), Toshifumi Wakano (Sony Semiconductor Solutions) |
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11:45-12:55 |
Lunch break ( 70 min. ) |
| (8) |
12:55-13:10 |
Practical Process of Dislocation-free Ge-on-Si Image Sensors |
T. Goji Etoh (Kindai Univ.), Taeko Ando (Ritsumeikan Univ.), Kentarou Sawano (Tokyo City Univ.), Kohsei Takehara (Kindai Univ.) |
| (9) |
13:10-13:25 |
Spectral-response simulation for image sensor evaluation and design |
Masahiko Nakamizo, Tang Bin, Kunihiro Yamamoto (Honor) |
| (10) |
13:25-13:50 |
Silicon-on-Insulator Pixel FinFET Technology for a High Conversion Gain and Low Dark Noise 2-Layer Transistor Pixel Stacked CIS |
Ryohei Takayanagi, Takashi Kamo, Ryosuke Yamachi, Mayu Sakurai, Hidetoshi Oishi, Takuya Iriguchi, Hiroshi Takahashi, Taikei Enomoto, Yuki Kageyama, Yusuke Tanaka, Yoshiaki Kikuchi, Junpei Yamamoto, hideomi kumano, Shinichi Yoshida, Yoshiaki Kitano, Kazunobu Ohta, Tomoyuki Hirano (Sony Semiconductor Solutions) |
| (11) |
13:50-14:15 |
A Monolithic Dual-Layer Pixel Design with BEOL IGZO Transistors featuring High Dual Conversion Gain Ratio and Scaled Pixel Size for Future Image Sensors |
Kishou Kaneko (Huawei Japan), S. Chen, H. Wang, L. Kang, Y. Li, W. Cui, S. Lu, W. Zhao, Y. Wang, Y. Yin, Y. Shao, Z. Lin, X. Cui, Y. Wu (Huawei) |
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14:15-14:25 |
Break ( 10 min. ) |
| (12) |
14:25-14:40 |
Study on 4T-DCG Scheme Large-Small Multiple-Photodiode Pixel for Small HDR CMOS Image Sensors |
Shogo Masui, Shuhei Takemoto, Ai Otani (Ritsumeikan Univ.), Ken Miyauchi (Ritsumeikan/Brillnics Japan), Hideki Owada, Chia Chi Kuo, Isao Takayanagi (Brillnics Japan), Shunsuke Okura (Ritsumeikan Univ.) |
| (13) |
14:40-15:05 |
A 3D Stacked 2-Stage LOFIC CMOS Image Sensor with Illuminance-Adaptive Signal Selection Function |
Masaya Yoshida, Kohei Takizawa, Takezou Mawaki, Ken Miyauchi, Rihito Kuroda (Tohoku Univ.) |
| (14) |
15:05-15:30 |
A 2.1 μm Single-Exposure 129 dB Dynamic Range CMOS Image Sensor with Triple Readout Technique |
Ryosuke Nakamura, Takaya Yamanaka, Shunsuke Kasashima, Chie Tokumitsu, Masatoshi Kitajima, Rikuya Matano, Takeshi Ishizaki, Hiroaki Iga, Makoto Aoki (SSS), Shohei Nabeyoshi, Masashi Takami, Shuto Kuwahara (SCK), Yorito Sakano, Yusuke Oike (SSS) |
| (15) |
15:30-15:45 |
Simulating the fidelity of reconstructed signals for charge-domain time-compressive CMOS image sensors in LiDAR/FLIm/DOT applications |
Keiichiro Kagawa, Daisuke Hayashi, Arashi Takakura, Yuto Umeki, Kanta Iyanagi, Keita Yasutomi, Shoji Kawahito (Shizuoka Univ.), Michitaka Yoshida (Okayama Univ.), Hajime Nagahara (UOsaka) |
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15:45-15:55 |
Break ( 10 min. ) |
| (16) |
15:55-16:10 |
Application of linear-logarithmic response to a 4-tap iToF imager with storage diode structure for high light intensity tolerance |
Gabriel Alcade, Tomohiro Okuyama (Shizuoka Univ.), Kamel Mars (SIST), De Xing Lioe (SUiCTE), Keiichiro Kagawa, Keita Yasutomi, Shoji Kawahito (Shizuoka Univ.) |
| (17) |
16:10-16:35 |
A 25M points/s Back-Illuminated Stacked SPAD Direct Time-of-Flight Depth Sensor with Equivalent Time Sampling and Pixel-Level Threshold Control for Automotive LiDAR |
Katsuhiko Hanzawa, Tatsuya Yui, Masahiro Hosoya, Yuqing Liu, Tadashi Yasufuku, Yoshinori Tanaka, Yoshiaki Tashiro, Albert Tumewu (SSS), Masataka Yamane, Masatoshi Shibata, Toshiki Sakada (SCK), Kazuhisa Akatsuka, Yudai Matsushita (SSS), Koki Yamada, Kouji Mori (SCK), Takahiro Toyoshima, Yorito Sakano, Oichi Kumagai, Kenichi Tsunoji, Masayuki Takahashi (SSS) |
| (18) |
16:35-17:00 |
2/3-inch 2.1Megapixel SPAD Image Sensor with 156dB Single-Shot Dynamic Range and LED Flicker Mitigation Based on Weighted Photon Counting Technique |
Yasuharu Ota, Hiroshi Sekine, Kazuhiro Morimoto, Wataru Endo, Tomoya Sasago, Aiman Tarek Abdelghafar, Satoru Mikajiri, Naoki Isoda, Daisuke Kobayashi, Mahito Shinohara, Kizashi Mikami, Kazuma Inoue, Hideaki Yasui, Kenzo Tojima, Masahi Niwa, Satoshi Omodani, Kazuma Chida, Kosei Uehira, Tetsuya Itano, Fumihiro Inui, Junji Iwata, Masanobu Ohmura, Yasushi Matsuno, Katsuhito Sakurai, Takeshi Ichikawa (Canon) |
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closing |
| Announcement for Speakers |
| Oral Presentation (一般) | Each speech will have 12 minutes for presentation and 3 minutes for discussion. |
| Oral Presentation (IEDM, VLSI) | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| IST |
Technical Group on Information Sensing Technologies (IST) [Latest Schedule]
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| Contact Address |
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Last modified: 2026-02-03 17:03:59
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