Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970
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IST2018-11
Study on Time-Resolved NIRS with High Time-Resolution CMOS LIP Image Sensor
Zhonghui Liu, DeXing Lioe, Min-Woong Seo, Masatsugu Niwayama, Masashi Hakamata, Keiichiro Kagawa, Keita Yasutomi (Shizuoka Univ.), Yasuko Fukushi, Seiji Yamamoto (Hamamatsu Univ. of Medicine), Shoji Kawahito (Shizuoka Univ.)
pp. 1 - 4
IST2018-12
A distance measurement method using a time-of-flight CMOS range image sensor with 4-tap output pixels and multiple time-windows
Kohei Yamada, Akihito Komazawa, Taishi Takasawa, Keita Yasutomi, Keiichiro Kagawa, Shoji Kawahito (Shizuoka Univ.)
pp. 5 - 8
IST2018-13
The ultimate high-speed image sensor: from 10 ns to 50 ps
Takeharu Goji Etoh (Ritsmeikan Univ., Kindai Univ.), Kazuhiro Shimonimura (Ritsmeikan Univ.), Kohsei Takehara (Kindai Univ.), Hideo Inumaru (CLEF), Naoki Hayashi, Yo Mitsui, Akihiko Iguchi, Tsutomu Mihara (Astrodesign)
pp. 9 - 12
IST2018-14
A Back-Illuminated Global-Shutter CMOS Image Sensor with Pixel-Parallel 14b Subthreshold ADC
Koji Ogawa, Masaki Sakakibara, Shin Sakai, Yasuhisa Tochigi, Katsumi Honda, Hidekazu Kikuchi, Takuya Wada, Yasunobu Kamikubo, Tsukasa Miura, Masahiko Nakamizo (Sony Semiconductor Solutions), Naoki Jyo, Ryo Hayashibara (Sony Semiconductor Manufacturing), Yohei Furukawa, Shinya Miyata (Sony LSI Design), Satoshi Yamamoto, Yoshiyuki Ota, Hirotsugu Takahashi, Tadayuki Taura, Yusuke Oike, Keiji Tatani, Takayuki Ezaki, Teruo Hirayama (Sony Semiconductor Solutions)
pp. 13 - 16
IST2018-15
A 2.1μm 33Mpixel CMOS imager with multi-functional 3-stage pipeline ADC for 480fps high-speed mode and 120fps low-noise mode
Kohei Tomioka, Toshio Yasue, Ryohei Funatsu, Tomohiro Nakamura (NHK STR), Takahiro Yamasaki (NHK Engineering Administration Department), Hiroshi Shimamoto (NHK STR), Tomohiko Kosugi, Sungwook Jun, Takashi Watanabe, Masanori Nagase, Toshiaki Kitajima, Satoshi Aoyama (Brookman Technology), Shoji Kawahito (Shizuoka University)
pp. 17 - 20
IST2018-16
A 1/4-inch 3.9Mpixel Low Power Event-driven Back-illuminated Stacked CMOS Image sensor
Oichi Kumagai, Atsumi Niwa, Katsuhiko Hanzawa, Hidetaka Kato, Shinichiro Futami, Toshio Ohyama, Tsutomu Imoto, Masahiko Nakamizo (Sony Semiconductor Solutions), Hirotaka Murakami (Sony Electronics), Tatsuki Nishino, Anas Bostamam, Takahiro Iinuma, Naoki Kuzuya (Sony Semiconductor Solutions), Kensuke Hatsukawa (Sony LSI Design), Brady, Frederick, Bidermann, William (Sony Electronics), Toshifumi Wakano (Sony Semiconductor Solutions), Hayato Wakabayashi, Yoshikazu Nitta (Sony Electronics)
pp. 21 - 24
IST2018-17
[Invited Talk]
Pixel/DRAM/logic 3-layer stacked CMOS image sensor technology
Hidenobu Tsugawa, Hiroshi Takahashi, Ryoichi Nakamura, Taku Umebayashi, Tomoharu Ogita, Hitoshi Okano, Kazuya Iwase, Hiroyuki Kawashima, Takatsugu Yamasaki, Daisuke Yoneyama, Jun Hashizume, Tsutomu Nakajima, Kenichi Murata, Yoshikazu Kanaishi, Kenji Ikeda, Keiji Tatani, Hajime Nakayama, Tsutomu Haruta, Tetsuo Nomoto (Sony)
pp. 25 - 29
IST2018-18
(See Japanese page.)
pp. 31 - 34
IST2018-19
An Experimental CMOS Photon Detector with 0.5e- RMS Temporal Noise and 15μm pitch Active Sensor Pixels
Toshiyuki Nishihara, Matsuo Matsumura,, Tsutomu Imoto, Kenichi Okumura, Yorito Sakano, Yuhi Yorikado, Yoshiaki Tashiro, Hayato Wakabayashi, Yusuke Oike, Yoshikazu Nitta (Sony Semiconductor Solutions)
pp. 35 - 38
IST2018-20
A Prototype Ultra-High Speed Global Shutter CMOS Image Sensor with 50Mfps Frame Rate
Manabu Suzuki, Masashi Suzuki, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.)
pp. 39 - 42
IST2018-21
An 8K4K-Resolution 60fps 450ke--Saturation-Signal Organic-Photoconductive-Film Global-Shutter CMOS Image Sensor with In-Pixel Noise Canceller
Kazuko Nishimura, Sanshiro Shishido, Yasuo Miyake, Masaaki Yanagida, Yoshiaki Satou, Makoto Shouho, Hidenari Kanehara, Ryota Sakaida, Yoshihiro Sato, Junji Hirase, Yuko Tomekawa (Panasonic), Yutaka Abe, Hiroshi Fujinaka (PSCS), Yoshiyuki Matsunaga (), Masashi Murakami, Mitsuru Harada, Yasunori Inoue (Panasonic)
pp. 43 - 46
IST2018-22
Single-crystalline GeSn Photodiode Array on Quartz Substrate for Back-side Illuminated Near-infrared Image Sensor
Hiroshi Oka, Keitaro Inoue (Osaka Univ.), Thi Thuy Nguyen, Shin-Ichiro Kuroki (Hiroshima Univ.), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
pp. 47 - 50
IST2018-23
Near-infrared Sensitivity Enhancement of a Back-illuminated Complementary Metal Oxide Semiconductor Image Sensor with a Pyramid Surface for Diffraction Structure
Itaru Oshiyama, Sozo Yokogawa, Harumi Ikeda, Yoshiki Ebiko, Tomoyuki Hirano, Suguru Saito, Oinoue Takashi, Yoshiya Hagimoto, Hayato Iwamoto (SSS)
pp. 51 - 54
IST2018-24
[Invited Talk]
High-image-quality,High-resolution Camera with High Sensitivity up to 1,100nm
Takeshi Koyama (Canon)
pp. 55 - 59
IST2018-25
[Invited Talk]
SOI monolithic pixel technology for radiation image sensor
Yasuo Arai, Toshinobu Miyoshi, Ikuo Kurachi (KEK)
pp. 61 - 66
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.