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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
IEICE-EID, IEICE-SDM, IDY [detail] 2018-12-25
11:45
Kyoto   Device Using Thin Film of GTO by MistCVD Method
Yuta Takishita, Sumio Sugisaki (Ryukoku Univ.), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
We made devices using Ga-Sn-O(GTO) thin films deposited by mist CVD method. A thin film transistor incorporating GTO pre... [more] IDY2018-57
pp.13-16
IEICE-EID, IEICE-SDM, IDY [detail] 2018-12-25
14:30
Kyoto   Dependence of thermoelectric properties and structure of Ga-Sn-O thin films on annealing
Yoku Ikeguchi, Tatsuya Aramaki (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Mutsumi Kimura (Ryukoku Univ.)
Ga-Sn-O(GTO) thin films were formed using RF magnetron sputtering, and the influence of deposition pressure and crystal ... [more] IDY2018-59
pp.33-36
IST 2016-03-11
16:20
Tokyo NHK Research Lab (Setagaya) Color Image Sensor with Three-stacked Organic Photoconductive Films
Toshikatsu Sakai, Hokuto Seo, Tomomi Takagi, Misao Kubota, Hiroshi Ohtake (NHK), Mamoru Furuta (Kochi Univ. of Tech.)
This paper describes a color image sensor with three stacked organic photoconductive films and transparent readout circu... [more] IST2016-19
pp.49-52
IEICE-EID, IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] 2016-01-28
15:04
Toyama Toyama Univ. Plasma treatment for source/drain regions of self-aligned InGaZnO thin-film. -- Effects of substrate bias during the plasma treatment of IGZO. --
Yusaku Magari, Tatsuya Toda, Hisao Makino, Mamoru Furuta (Kochi Univ. of Technol.)
 [more]
IDY, IEICE-EID, IEE-EDD 2013-01-25
10:10
Shizuoka Shizuoka Univ. Fabrication and properties of Oxide TFT with an IGZO/AlOx stack prepared by non-vacuum process "mist CVD"
Toshiyuki Kawaharamura, Takayuki Uchida, Dapeng Wang, Masaru Sanada, Mamoru Furuta (KUT)
Last year, oxide TFT consisting of channel layer (IGZO) (47 nm) and gate insulator (AlOx) (116 nm) was fabricated by mis... [more] IDY2013-8
pp.73-76
IDY, IEICE-EID, IEE-EDD, IEIJ-OMD 2011-01-29
09:55
Kochi Kochi University of Technology Deposition of Insulator Film with New Facing Electrodes CVD for Low Temperature Devices
Tokiyoshi Matsuda, Mamoru Furuta, Takahiro Hiramatsu, Hiroshi Furuta, Takashi Hirao (Kochi Univ. of Technol.)
 [more]
IDY, IEICE-EID 2010-11-26
15:30
Tokyo Kikai-Shinko-Kaikan Bldg. Debriefing Session of IMID conference -- TFT technology --
Mamoru Furuta (Kochi Univ. of Tech.)
Topics of thin-film transistors (TFTs) related articles in international conference on information display (IMID) 2010 w... [more] IDY2010-82
pp.17-19
IST 2008-12-16
14:00
Tokyo Univ. of Tokyo Stacked Organic Image Sensor with Zinc-oxide TFTs as Signal Readout Circuit
Hokuto Seo, Satoshi Aihara, Masakazu Nanba, Toshihisa Watabe, Hiroshi Ohtake, Misao Kubota, Norifumi Egami (NHK), Takahiro Hiramatsu, Tokiyoshi Matsuda, Mamoru Furuta, Takashi Hirao (Kochi Uni. of Technol)
We have studied a single-chip image sensor with stacked structure consisting of transparent readout circuits and organic... [more]
 Results 1 - 8 of 8  /   
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