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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 9 of 9  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
IDY, IEICE-EID, SID-JC [detail] 2018-07-30
14:15
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Development of Top-Gate TFTs for Plastic-Film LCDs
Yohei Yamaguchi, Hiroshi Kawanago, Isao Suzumura (JDI)
A thin-film-transistor (TFT) technology for plastic-film liquid crystal displays (LCDs) was developed herein. Top-gate o... [more] IDY2018-36
pp.13-16
IDY 2018-03-08
15:50
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Self-Aligned Source/Drain Formation Technology by AlO Sputtering Realizing Highly Reliable Oxide TFT Backplane
Hiroshi Hayashi, Atsuhito Murai, Masanori Miura, Yasuhiro Terai, Yoshihiro Oshima, Tohru Saitoh, Yasunobu Hiromasu, Toshiaki Arai (JOLED)
We have developed a novel fabrication process of self-aligned top-gate oxide TFT suitable for high resolution and high s... [more] IDY2018-21
pp.31-35
IDY 2018-03-08
16:15
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Simulation Study of Novel Thin-Film Devices Using Depletion State of Amorphous Oxide Semiconductor
Katsumi Abe, Masato Fujinaga, Takeshi Kuwagaki (Silvaco Japan)
Novel thin-film devices using amorphous oxide semiconductor (AOS) were studied via device simulation. The simulation of ... [more] IDY2018-22
pp.37-41
IDY 2017-02-24
15:55
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Highly Reliable Oxide TFT with Original Solution-Processed Materials
Yukiko Hirano, Minehide Kusayanagi, Sadanori Arae, Ryoichi Saotome, Yuji Sone, Shinji Matsumoto, Yuki Nakamura, Yuichi Ando, Naoyuki Ueda, Katsuyuki Yamada (Ricoh)
We have developed original oxide materials and inks to make TFT. The original materials were doped-oxide semiconductor, ... [more] IDY2017-23
pp.23-27
IDY, IEICE-EID, IEE-EDD 2013-01-25
10:02
Shizuoka Shizuoka Univ. Development of Simulation Model for Oxide Semiconductor Thin-Film Transistors
Hiroshi Tsuji, Mitsuru Nakata, Hiroto Sato, Yoshiki Nakajima, Yoshihide Fujisaki, Tatsuya Takei, Toshihiro Yamamoto, Hideo Fujikake (NHK)
A new simulation model for current-voltage characteristics of oxide semiconductor thin-film transistors (a-IGZO TFTs) is... [more] IDY2013-7
pp.69-72
IDY, IEICE-EID, IEE-EDD 2013-01-25
10:10
Shizuoka Shizuoka Univ. Fabrication and properties of Oxide TFT with an IGZO/AlOx stack prepared by non-vacuum process "mist CVD"
Toshiyuki Kawaharamura, Takayuki Uchida, Dapeng Wang, Masaru Sanada, Mamoru Furuta (KUT)
Last year, oxide TFT consisting of channel layer (IGZO) (47 nm) and gate insulator (AlOx) (116 nm) was fabricated by mis... [more] IDY2013-8
pp.73-76
IDY, IEICE-EID 2012-11-07
15:00
Tokyo Kikai-Shinko-Kaikan Bldg. Report on IMID 2012 -- Thin-Film Transistor technologies --
Aya Hino, Kazushi Hayashi (Kobelco)
We review the papers that were presented in the session of TFT-related technologies at IMID 2012. [more] IDY2012-63
pp.13-16
IDY, IEICE-EID 2010-11-26
15:30
Tokyo Kikai-Shinko-Kaikan Bldg. Debriefing Session of IMID conference -- TFT technology --
Mamoru Furuta (Kochi Univ. of Tech.)
Topics of thin-film transistors (TFTs) related articles in international conference on information display (IMID) 2010 w... [more] IDY2010-82
pp.17-19
IST 2008-12-16
14:00
Tokyo Univ. of Tokyo Stacked Organic Image Sensor with Zinc-oxide TFTs as Signal Readout Circuit
Hokuto Seo, Satoshi Aihara, Masakazu Nanba, Toshihisa Watabe, Hiroshi Ohtake, Misao Kubota, Norifumi Egami (NHK), Takahiro Hiramatsu, Tokiyoshi Matsuda, Mamoru Furuta, Takashi Hirao (Kochi Uni. of Technol)
We have studied a single-chip image sensor with stacked structure consisting of transparent readout circuits and organic... [more]
 Results 1 - 9 of 9  /   
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