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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 10 of 10  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
IST 2019-09-20
13:15
Tokyo Kikai-Shinko-Kaikan Bldg. Digital Pixel Image Sensors with Linear and Wide-Dynamic-Range Output Developed by Pixel-Wise 3-D Integration
Masahide Goto (NHK), Yuki Honda (NHK-ES), Toshihisa Watabe, Kei Hagiwara, Masakazu Nanba, Yoshinori Iguchi (NHK), Takuya Saraya, Masaharu Kobayashi (Univ. of Tokyo), Eiji Higurashi (AIST), Hiroshi Toshiyoshi, Toshiro Hiramoto (Univ. of Tokyo)
We report digital pixel image sensors developed by using pixel-wise three-dimensional (3D) integration technology. Photo... [more] IST2019-47
pp.17-20
IST 2018-06-27
14:10
Tokyo Tokyo Univ. Sci.-Morito-Kinenkan [Poster Presentation] [Poster Presentation] A backside illumination fully depleted SOI pixel detector for time-of-flight range imaging
Ho Hai Nam, Keita Yasutomi, Sanggwon Lee, Shoji Kawahito (Shizuoka Univ.)
A back-illuminated fully-depleted silicon-on-insulator (SOI) time-of-flight (TOF) image sensor have been realized using ... [more] IST2018-38
pp.29-32
IST 2018-03-09
16:15
Tokyo NHK Housou-Gijyutu Lab. [Invited Talk] SOI monolithic pixel technology for radiation image sensor
Yasuo Arai, Toshinobu Miyoshi, Ikuo Kurachi (KEK)
Silicon-On-Insulator (SOI) technology is a suitable choice to realize monolithic radiation imaging device as it involves... [more] IST2018-25
pp.61-66
AIT, IIEEJ, AS, CG-ARTS 2017-03-14
11:15
Tokyo Ochanomizu Univ. Developing Digital Contents Using Convex Solids of Revolution for Interface
Yuka Takahashi, Hiroki Tone, Akihiro Matsuura (Tokyo Denki Univ.)
We focus on the rolling of convex solids of revolution on a plane and develop an interactive system that uses these soli... [more] AIT2017-80
pp.123-124
IEICE-ICD, IEICE-SDM, IST [detail] 2016-08-02
09:00
Osaka Central Electric Club [Invited Talk] Soft Error Immunity of Ultra-Low Voltage SRAM
Masanori Hashimoto (Osaka Univ.)
This paper discusses soft error immunity of near-threshold/subthreshold SRAM. In terrestrial environment, high-energy ne... [more]
IEICE-ICD, IEICE-SDM, IST [detail] 2016-08-03
14:40
Osaka Central Electric Club PN-Body Tied Super Steep SS FET with Body Bias below 1V and Drain Bias 0.1V
Takahiro Yoshida, Jiro Ida, Takashi Horii (KIT), Masao Okihara (Lapis), Yasuo Arai (KEK)
We have found out that the super steep Subthreshold Slope (SS) of the PN-body tied SOI FET appeared with the body voltag... [more]
IST, ME, IEICE-BioX [detail] 2016-06-21
10:00
Ishikawa Ishikawa-Shiko-Kinen-Bunka-Kouryukan Performance Improvement in Person Verification Using Intra-Body Propagation Signals -- Effect of Changing Input Signal and Propagated Path --
Ryutarou Nishi, Itaru Ogushi, Takahiro Murakami, Isao Nakanishi (Tottori Univ.)
In recent years, it has increased the opportunity to use the biometric authentication. However, it is vulnerable to spoo... [more]
IST 2015-05-08
13:10
Tokyo   [Poster Presentation] Design and Evaluation of lock-in image sensors using full-depleted SOI pixels
Ryo Hasegawa, Keita Yasutomi, Sumeet Shrestha, Yoon Hyungjune, Nobukazu Teranishi, Hiroki Kamehama, Keiichiro Kagawa, Shoji Kawahito (Shizuoka Univ)
This paper proposes a lock-in pixel using a fully-depleted SOI pixel structure, which has high sensitivity for near-infr... [more] IST2015-26
pp.9-12
IST 2015-03-27
09:25
Tokyo Kikai-Shinko-Kaikan Bldg. Three-Dimensional Integrated CMOS Image Sensors with Pixel-Parallel Signal Processors
Masahide Goto, Kei Hagiwara, Yoshinori Iguchi, Hiroshi Ohtake (NHK), Takuya Saraya, Masaharu Kobayashi, Eiji Higurashi, Hiroshi Toshiyoshi, Toshiro Hiramoto (Univ. Tokyo)
We report the first demonstration of three-dimensional (3D) integrated CMOS image sensors with pixel-parallel A/D conver... [more] IST2015-11
pp.5-8
IST 2012-11-21
15:40
Shizuoka Sanaru-kaikan, Shizuoka Univ. (Hamamatsu) [Invited Talk] High-performance and high-functionality SOI photodiodes utilizing surface plasmon
Hiroshi Inokawa, Hiroaki Satoh, Atsushi Ono, Ken Kawakubo (Shizuoka Univ.)
In order to enhance the performance and functionality of the pn-junction photodiode in silicon on insulator (SOI), surfa... [more] IST2012-67
pp.27-31
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